Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
- Dept. of Energy (DOE), Washington DC (United States)
Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. From materials and devices to modules and circuits to application-ready systems integration, ARPA-E projects have demonstrated the potential of WBG semiconductors to lower the cost of high-efficiency power electronics to enable broad adoption in energy applications.
- Research Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1464211
- Country of Publication:
- United States
- Language:
- English
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