Analysis of the IBL and LBNL irradiated PIN and PN diodes

Technical Report · Sun Jul 01 04:00:00 EDT 2018

DOI:https://doi.org/10.2172/1459608· OSTI ID:1459608

Vizkelethy, Gyorgy ^[1]; Aguirre, Brandon Adrian ^[1]; Bielejec, Edward S. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This report is a follow-up to the previous report on the difference between high fluence, high and low flux irradiations. There was a discrepancy in the data for the LBNL irradiated S5821 PIN diodes. There were diodes irradiated in the two batches (high and low flux) with the same flux and fluence for reference (lell ions/cm²/shot and 5, 10, and 20 ions/cm² total flux). Although these diodes should have the same electrical characteristics their leakage currents were different by a factor of 5-6 (batch 2 was larger). Also, the C-V measurements showed drastically different results. It was speculated that these discrepancies were due to one of the following two reasons: 1. Different times elapsed between radiation and characterization. 2. Different areas were irradiated (roughly half of the diodes were covered during irradiation). To address the first concern, we annealed the devices according to the ASTM standard [1]. The differences remained the same. To determine the irradiated area, we performed large area IBIC scans on several devices. Error! Reference source not found. below shows the IBIC maps of two devices one from each batch. The irradiated areas are approximately the same.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1459608
• Report Number(s): SAND2018-7095R; 665364
• Country of Publication: United States
• Language: English

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