Ionization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors

Journal Article · Wed Dec 01 04:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819142· OSTI ID:20014731

Wilkins, R; Shojah-Ardalan, S; Kirk, W P ^[1]

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1. and others

The radiation tolerance of two quantum devices, InP-based resonant tunneling diodes (RTD) and GaAs based two-dimensional electron gas transistors (2-DEGT), was investigated with ionizing and displacement damage radiation. The RTDs were subject to a maximum total gamma dose of 1 Mrad(InP), 55 MeV protons to a fluence of 3.5x10{sup 11} cm{sup {minus}2}, high energy neutrons to a fluence of 5x10{sup 10} cm{sup {minus}2} and heavy ions with a maximum LET (InP) of 23.6 MeV-cm{sup 2}/mg to a fluence of 1x10{sup 7} cm{sup {minus}2}. Using the peak-to-valley current ratios as the figure of merit, no radiation effects were detected on the RTDs measured under these circumstances. The 2-DEGTs were irradiated to a total gamma dose of 50 krad(GaAs) and 55 MeV protons to a fluence of 5x10{sup 10} cm{sup {minus}2}. Under gamma irradiation, a reduction in transconductance was observed, while the proton irradiated devices show an enhancement in the transconductance. The magnitude of these effects was proportional to gamma dose and proton fluence respectively. The effects are transient. For the gamma exposure, the tested 2-DEGTs almost completely recovered their pre-radiation performance. However, the proton-irradiated devices only recovered about half-way to their pre-irradiated characteristics. The transient times were on order of hours and may indicate annealing effects.

• Research Organization: Prairie View A and M Univ., TX (US)
• OSTI ID: 20014731
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GAMMA RADIATION
HEAVY IONS
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
PROTONS
RADIATION DOSES
TRANSISTORS
TUNNEL DIODES