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Title: Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1458799
Grant/Contract Number:
FG02-07ER46431
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 1; Related Information: CHORUS Timestamp: 2018-07-03 14:38:10; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.121.017402.
Gong, Shi-Jing, Zheng, Fan, & Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States. doi:10.1103/PhysRevLett.121.017402.
Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Tue . "Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe". United States. doi:10.1103/PhysRevLett.121.017402.
@article{osti_1458799,
title = {Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe},
author = {Gong, Shi-Jing and Zheng, Fan and Rappe, Andrew M.},
abstractNote = {},
doi = {10.1103/PhysRevLett.121.017402},
journal = {Physical Review Letters},
number = 1,
volume = 121,
place = {United States},
year = {Tue Jul 03 00:00:00 EDT 2018},
month = {Tue Jul 03 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on July 3, 2019
Publisher's Accepted Manuscript

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