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Title: Semiconductor ferroelectric compositions and their use in photovoltaic devices

Abstract

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
The Trustees Of The University Of Pennsylvania, Philadelphia, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1330710
Patent Number(s):
9,484,475
Application Number:
13/649,154
Assignee:
The Trustees Of The University Of Pennsylvania (Philadelphia, PA)
DOE Contract Number:  
FG02-07ER46431
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Rappe, Andrew M, Davies, Peter K, Spanier, Jonathan E, Grinberg, Ilya, and West, Don Vincent. Semiconductor ferroelectric compositions and their use in photovoltaic devices. United States: N. p., 2016. Web.
Rappe, Andrew M, Davies, Peter K, Spanier, Jonathan E, Grinberg, Ilya, & West, Don Vincent. Semiconductor ferroelectric compositions and their use in photovoltaic devices. United States.
Rappe, Andrew M, Davies, Peter K, Spanier, Jonathan E, Grinberg, Ilya, and West, Don Vincent. Tue . "Semiconductor ferroelectric compositions and their use in photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1330710.
@article{osti_1330710,
title = {Semiconductor ferroelectric compositions and their use in photovoltaic devices},
author = {Rappe, Andrew M and Davies, Peter K and Spanier, Jonathan E and Grinberg, Ilya and West, Don Vincent},
abstractNote = {Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

Patent:

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Works referenced in this record:

Tip-enhanced photovoltaic effects in bismuth ferrite
journal, March 2011

  • Alexe, Marin; Hesse, Dietrich
  • Nature Communications, Vol. 2, Issue 1
  • DOI: 10.1038/ncomms1261

Temperature-dependent Raman scattering of KTa1−xNbxO3 thin films
journal, June 2010

  • Bartasyte, A.; Kreisel, J.; Peng, W.
  • Applied Physics Letters, Vol. 96, Issue 26
  • DOI: 10.1063/1.3455326

Photoconductivity in BiFeO3 thin films
journal, March 2008

  • Basu, S. R.; Martin, L. W.; Chu, Y. H.
  • Applied Physics Letters, Vol. 92, Issue 9
  • DOI: 10.1063/1.2887908

New Highly Polar Semiconductor Ferroelectrics through d 8 Cation-O Vacancy Substitution into PbTiO 3 : A Theoretical Study
journal, December 2008

  • Bennett, Joseph W.; Grinberg, Ilya; Rappe, Andrew M.
  • Journal of the American Chemical Society, Vol. 130, Issue 51
  • DOI: 10.1021/ja8052249

High-Efficiency Ferroelectric-Film Solar Cells with an n-type Cu 2 O Cathode Buffer Layer
journal, May 2012

  • Cao, Dawei; Wang, Chunyan; Zheng, Fengang
  • Nano Letters, Vol. 12, Issue 6
  • DOI: 10.1021/nl300009z

Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3
journal, February 2009


Wide bandgap tunability in complex transition metal oxides by site-specific substitution
journal, January 2012

  • Choi, Woo Seok; Chisholm, Matthew F.; Singh, David J.
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1690

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers
journal, February 2012


High‐voltage bulk photovoltaic effect and the photorefractive process in LiNbO 3
journal, August 1974

  • Glass, A. M.; von der Linde, D.; Negran, T. J.
  • Applied Physics Letters, Vol. 25, Issue 4
  • DOI: 10.1063/1.1655453

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials
journal, November 2013

  • Grinberg, Ilya; West, D. Vincent; Torres, Maria
  • Nature, Vol. 503, Issue 7477, p. 509-512
  • DOI: 10.1038/nature12622

Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies
journal, October 1986


Photoassisted water decomposition by ferroelectric lead zirconate titanate ceramics with anomalous photovoltaic effects
journal, June 1986

  • Inoue, Yasunobu; Sato, Kiyoshi; Sato, Kazunori
  • The Journal of Physical Chemistry, Vol. 90, Issue 13, p. 2809-2810
  • DOI: 10.1021/j100404a006

Band Gap Tailored Zn(Nb 1− x V x ) 2 O 6 Solid Solutions as Visible Light Photocatalysts
journal, September 2009

  • Ji, Sang Min; Choi, Sun Hee; Jang, Jum Suk
  • The Journal of Physical Chemistry C, Vol. 113, Issue 41
  • DOI: 10.1021/jp901882q

Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5−xBix)O3 semiconductors
journal, November 2007


Sintering Behavior and Surface Microstructure of PbO-Rich PbNi 1/3 Nb 2/3 O 3 -PbTiO 3 -PbZrO 3 Ceramics
journal, November 2001


A photoferroelectric material is more than the sum of its parts
journal, March 2012

  • Kreisel, J.; Alexe, M.; Thomas, P. A.
  • Nature Materials, Vol. 11, Issue 4
  • DOI: 10.1038/nmat3282

Influence of sample thickness on the performance of photostrictive ceramics
journal, August 1998

  • Poosanaas, P.; Dogan, A.; Thakoor, S.
  • Journal of Applied Physics, Vol. 84, Issue 3
  • DOI: 10.1063/1.368216

Band-gap engineering via local environment in complex oxides
journal, June 2011


First-Principles Atomistic Thermodynamics for Oxidation Catalysis: Surface Phase Diagrams and Catalytically Interesting Regions
journal, January 2003


Above-bandgap voltages from ferroelectric photovoltaic devices
journal, January 2010


Photovoltaic effects in BiFeO3
journal, August 2009

  • Yang, S. Y.; Martin, L. W.; Byrnes, S. J.
  • Applied Physics Letters, Vol. 95, Issue 6
  • DOI: 10.1063/1.3204695

Dirac Semimetal in Three Dimensions
journal, April 2012


First-Principles Calculation of the Bulk Photovoltaic Effect in Bismuth Ferrite
journal, December 2012


First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics
journal, September 2012


Zr-Modified Pb(Mg 1/3 Nb 2/3 )O 3 with a Long-Range Cation Order
journal, September 2008