Iron and intrinsic deep level states in Ga2O3

Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstubner, U.; Vines, L.

doi:10.1063/1.5020134

Title: Iron and intrinsic deep level states in Ga₂O₃

Journal Article · Wed Jan 24 00:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5020134· OSTI ID:1458679

^[1]; Varley, J. B. ^[2]; Kuznetsov, A. Yu. ^[1]; Svensson, B. G. ^[1]; Alfieri, G. ^[3]; Mihaila, A. ^[3]; Badstubner, U. ^[3]; Vines, L. ^[1]

Univ. of Oslo (Norway). Department of Physics/Centre for Materials Science and Nanotechnology
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
ABB Corporate Research, Segelhofstrasse (Switzerland)

In this study, using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga₂O₃. First, our results indicate that Fe_Ga, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ~0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1458679

Alternate ID(s):: OSTI ID: 1417925

Report Number(s):: LLNL-JRNL-743968; 898727

Journal Information:: Applied Physics Letters, Vol. 112, Issue 4; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 153 works

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