Lifetime laser damage performance of β-Ga2O3 for high power applications

Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

doi:10.1063/1.5021603

Lifetime laser damage performance of β-Ga₂O₃ for high power applications

Journal Article · Tue Mar 20 00:00:00 EDT 2018 · APL Materials

DOI:https://doi.org/10.1063/1.5021603· OSTI ID:1458626

Yoo, Jae-Hyuck ^[1]; Rafique, Subrina ^[2]; Lange, Andrew ^[1]; Zhao, Hongping ^[3]; ^[4]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). National Ignition Facility (NIF), Physical and Life Sciences and Photon Sciences
The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering; Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Electrical Engineering and Computer Science
The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering and Dept. of Materials Science and Engineering; Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Electrical Engineering and Computer Science
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). National Ignition Facility (NIF), Materials Engineering Division and Photon Sciences

Gallium oxide (Ga₂O₃) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, by using systematic laser damage performance tests, we establish that β-Ga₂O₃ has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga₂O₃ samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga₂O₃. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga₂O₃ is due to lower absorptive defect concentrations and reduced epitaxial stress.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1458626

Alternate ID(s):: OSTI ID: 1427319

Report Number(s):: LLNL-JRNL--741078; 894761

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 3 Vol. 6; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

Gallium Oxide for High‐Power Optical Applications Deng, Huiyang; Leedle, Kenneth J.; Miao, Yu Advanced Optical Materials, Vol. 8, Issue 7 https://doi.org/10.1002/adom.201901522	journal	January 2020
Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure Li, Zhe; An, Zhiyuan; Xu, Yu Journal of Materials Science, Vol. 54, Issue 14 https://doi.org/10.1007/s10853-019-03628-z	journal	April 2019
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Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
chemical compounds
epitaxy
laser applications
photoluminescence
power electronics
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