Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

Zhou, Xinghao; Liu, Rui; Sun, Ke; Friedrich, Dennis; McDowell, Matthew T.; Yang, Fan; Omelchenko, Stefan T.; Saadi, Fadl H.; Nielander, Adam C.; Yalamanchili, Sisir; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

doi:10.1039/c5ee01687h

Title: Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Energy & Environmental Science

DOI:https://doi.org/10.1039/c5ee01687h· OSTI ID:1457528

Zhou, Xinghao ^[1]; Liu, Rui ^[2]; Sun, Ke ^[3]; Friedrich, Dennis ^[4]; McDowell, Matthew T. ^[3]; Yang, Fan ^[5]; Omelchenko, Stefan T. ^[1]; Saadi, Fadl H. ^[1];

^[6]; Yalamanchili, Sisir ^[1]; Papadantonakis, Kimberly M. ^[3]; Brunschwig, Bruce S. ^[7]; Lewis, Nathan S. ^[8]

California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP) and Department of Applied Physics & Materials Science
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP)
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP) and Division of Chemistry and Chemical Engineering
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP); Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie (Germany)
Joint Center for Artificial Photosynthesis; California Institute of Technology; Pasadena; USA; Division of Chemistry and Chemical Engineering
California Inst. of Technology (CalTech), Pasadena, CA (United States). Division of Chemistry and Chemical Engineering
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP) and Beckman Institute and Molecular Materials Research Center
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP), Division of Chemistry and Chemical Engineering, Beckman Institute and Molecular Materials Research Center and Kavli Nanoscience Institute

Introduction of an ultrathin (2 nm) film of cobalt oxide (CoO_x) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiO_x coating yields stable photoelectrodes with photocurrent-onset potentials of ~-240 mV relative to the equilibrium potential for O₂(g) evolution and current densities of ~28 mA cm^-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np⁺ buried homojunctions.

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Research Organization:: California Institute of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis (JCAP)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0004993

OSTI ID:: 1457528

Journal Information:: Energy & Environmental Science, Vol. 8, Issue 9; ISSN 1754-5692

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 111 works

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Title: Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

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