Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy

Schulte, Kevin L.; Simon, John; Ptak, Aaron J.

doi:10.1002/pip.3027

Title: Multijunction Ga_0.5In_0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy

Journal Article · Wed Jun 13 00:00:00 EDT 2018 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.3027· OSTI ID:1478619

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National Renewable Energy Lab. (NREL), Golden, CO (United States)

Abstract We report the development of Ga _0.5 In _0.5 P/GaAs monolithic tandem solar cells grown by dynamic hydride vapor phase epitaxy, a III‐V semiconductor growth alternative to metalorganic vapor phase epitaxy with the potential to reduce growth costs. The tandem device consists of 3 components: a 1.88 eV band gap ( E _G ) Ga _0.5 In _0.5 P top cell, a p‐Ga _0.5 In _0.5 P/n‐GaAs tunnel junction, and a 1.41 eV rear heterojunction GaAs cell. The open circuit voltage ( V _OC ) and fill factor are 2.40 V and 88.4%, respectively, indicative of high material quality. Electroluminescence measurements show that the individual V _OC of the top and bottom cell are 1.40 and 1.00 V, respectively, yielding E _G ‐voltage offsets ( W _OC ) of 0.48 and 0.41 V. The W _OC of the top cell is higher because of an unpassivated front surface rather than the bulk material quality. The Ga _0.5 In _0.5 P top cell limits the current of this series‐connected device for this reason to a short‐circuit current density ( J _SC ) of 11.16 ± 0.15 mA/cm ² yielding an overall efficiency of 23.7% ± 0.3%. We show through modeling that thinning the emitter will improve the present result, with a clear pathway toward 30% efficiency with the existing material quality. This result is a promising step toward the realization of high‐efficiency III‐V multijunction devices with reduced growth cost.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1478619

Alternate ID(s):: OSTI ID: 1454277

Report Number(s):: NREL/JA-5J00-71357

Journal Information:: Progress in Photovoltaics, Vol. 26, Issue 11; ISSN 1062-7995

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 28 works

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References (17)

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy Ptak, Aaron J.; Simon, John; Schulte, Kevin L. IEEE Journal of Photovoltaics, Vol. 8, Issue 1 https://doi.org/10.1109/JPHOTOV.2017.2756566	journal	January 2018
Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9 https://doi.org/10.1002/pip.2776	journal	May 2016
Deposition of high quality GaAs films at fast rates in the LP-CVD system Grüter, K.; Deschler, M.; Jürgensen, H. Journal of Crystal Growth, Vol. 94, Issue 3 https://doi.org/10.1016/0022-0248(89)90082-1	journal	March 1989
Band gap-voltage offset and energy production in next-generation multijunction solar cells King, R. R.; Bhusari, D.; Boca, A. Progress in Photovoltaics: Research and Applications, Vol. 19, Issue 7 https://doi.org/10.1002/pip.1044	journal	November 2010
Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy Schulte, Kevin L.; Simon, John; Mangum, John IEEE Journal of Photovoltaics, Vol. 7, Issue 4 https://doi.org/10.1109/JPHOTOV.2017.2691659	journal	July 2017
New Phenomenon in Narrow Germanium $p - n$ Junctions Esaki, Leo Physical Review, Vol. 109, Issue 2 https://doi.org/10.1103/PhysRev.109.603	journal	January 1958
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells Shockley, William; Queisser, Hans J. Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519 https://doi.org/10.1063/1.1736034	journal	March 1961
Effect of Growth Temperature on GaAs Solar Cells at High MOCVD Growth Rates Schmieder, Kenneth J.; Armour, Eric A.; Lumb, Matthew P. IEEE Journal of Photovoltaics, Vol. 7, Issue 1 https://doi.org/10.1109/JPHOTOV.2016.2614346	journal	January 2017
Effect of gas‐phase stoichiometry on the minority‐carrier diffusion length in vapor‐grown GaAs Ettenberg, M.; Olsen, G. H.; Nuese, C. J. Applied Physics Letters, Vol. 29, Issue 3 https://doi.org/10.1063/1.89027	journal	August 1976
Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors Steiner, M. A.; Perl, E. E.; Geisz, J. F. Journal of Applied Physics, Vol. 121, Issue 16 https://doi.org/10.1063/1.4982234	journal	April 2017
Solar cell efficiency tables (version 51) Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D. Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 1 https://doi.org/10.1002/pip.2978	journal	December 2017
Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy Simon, John; Schulte, Kevin L.; Jain, Nikhil IEEE Journal of Photovoltaics, Vol. 7, Issue 1 https://doi.org/10.1109/JPHOTOV.2016.2614122	journal	January 2017
Recent advances in visible LED'S Bhargava, R. N. IEEE Transactions on Electron Devices, Vol. 22, Issue 9 https://doi.org/10.1109/T-ED.1975.18205	journal	September 1975
Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substrates Woodbridge, K.; Gowers, J. P.; Joyce, B. A. Journal of Crystal Growth, Vol. 60, Issue 1 https://doi.org/10.1016/0022-0248(82)90168-3	journal	November 1982
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells Geisz, J. F.; Steiner, M. A.; García, I. Applied Physics Letters, Vol. 103, Issue 4 https://doi.org/10.1063/1.4816837	journal	July 2013
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics Sah, Chih-tang; Noyce, Robert; Shockley, William Proceedings of the IRE, Vol. 45, Issue 9 https://doi.org/10.1109/JRPROC.1957.278528	journal	September 1957
Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x<0.53 for response to longer wavelengths (<1.7 mu m) Linga, K. R.; Olsen, G. H.; Ban, V. S. Journal of Lightwave Technology, Vol. 10, Issue 8 https://doi.org/10.1109/50.156844	journal	January 1992

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