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Freestanding NiFe Oxyfluoride Holey Film with Ultrahigh Volumetric Capacitance for Flexible Asymmetric Supercapacitors

Journal Article · · Small
 [1];  [1];  [2];  [3];  [4];  [4];  [2];  [5];  [6]
  1. NanoScience Technology Center, University of Central Florida, Orlando FL 32826 USA
  2. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA
  3. Department of Materials Science and Engineering, University of Central Florida, Orlando FL 32826 USA
  4. Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando FL 32816 USA
  5. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland WA 99352 USA
  6. NanoScience Technology Center, University of Central Florida, Orlando FL 32826 USA; Department of Materials Science and Engineering, University of Central Florida, Orlando FL 32826 USA
In this work, a freestanding NiFe oxyfluoride (NiFeOF) holey film was prepared by electrochemical deposition and anodic treatments. With the combination of good electrical conductivity and holey structure, the NiFeOF holey film offers superior electrochemical performance, due to the following reasons: (i) The residual metal alloy framework can be used as the current collector to improve electrode conductivity. Moreover, the as-prepared freestanding NiFeOF holey film can be used as a supercapacitor electrode without reliance on binders and other additives. The residual metal alloy framework and binder-free electrode effectively reduces electrode resistance, thus improving electron transport. (ii) The highly interconnected holey structure and hierarchical pore distribution provides a high specific surface area to improve electron transport, enhancing rapid ion transport and mitigating diffusion limitations throughout the holey film. (iii) The excellent mechanical characteristics facilitate flexibility and cyclability related performance. Additionally, the NiFeOF holey film presents exceptional electrochemical performance, showing that it is a promising alternative for small/micro-size electronic devices.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1439669
Report Number(s):
PNNL-SA-130019; KC0203020
Journal Information:
Small, Journal Name: Small Journal Issue: 3 Vol. 14; ISSN 1613-6810
Publisher:
Wiley
Country of Publication:
United States
Language:
English

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