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System and method for crystalline sheet growth using a cold block and gas jet

Patent ·
OSTI ID:1439330
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A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.
Research Organization:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0000595
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (Gloucester, MA)
Patent Number(s):
9,957,636
Application Number:
14/226,991
OSTI ID:
1439330
Country of Publication:
United States
Language:
English

References (1)

Improvements in the Horizontal Ribbon Growth technique for single crystal silicon journal September 1980

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36 MATERIALS SCIENCE