The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics

Liu, Mimi; Berg, Dominik M.; Hwang, Po-Yu; Lai, Cheng-Yu; Stone, Kevin H.; Babbe, Finn; Dobson, Kevin D.; Radu, Daniela R.

doi:10.1007/s10853-018-2082-1

Title: The promise of solution-processed Fe₂GeS₄ thin films in iron chalcogenide photovoltaics

Journal Article · Tue Feb 06 00:00:00 EST 2018 · Journal of Materials Science

DOI:https://doi.org/10.1007/s10853-018-2082-1· OSTI ID:1438812

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Delaware State Univ., Dover (United States). Dept. of Chemistry
Delaware State Univ., Dover (United States). Dept. of Chemistry; Rowan Univ., Glassboro, NJ (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Univ. of Luxembourg, Belvaux (Luxembourg)
Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion
Delaware State Univ., Dover (United States). Dept. of Chemistry; Univ. of Delaware, Newark, DE (United States). Dept. of Materials Science and Engineering

The olivine Fe₂GeS₄, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe₂GeS₄ precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe₂GeS₄ powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe₂GeS₄ precursor dispersion and subjected to the same thermal treatment render high-purity Fe₂GeS₄ thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe₂GeS₄ thin films as the sole absorber in a solution-based solar cell, open-circuit voltages of 361 mV are observed, while the use of the Fe₂GeS₄ films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe₂GeS₄.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EE0006322; AC02-76SF00515; 1458980; 1435716

OSTI ID:: 1438812

Journal Information:: Journal of Materials Science, Vol. 53, Issue 10; ISSN 0022-2461

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Title: The promise of solution-processed Fe₂GeS₄ thin films in iron chalcogenide photovoltaics