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Title: Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe 2SiS 4 and Fe 2GeS 4 Photovoltaics

Abstract

Fe 2SiS 4 and Fe 2GeS 4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe 2SiS 4 or Fe 2GeS 4 have been reported to date. In the presented work, nanoprecursors to Fe 2SiS 4 and Fe 2GeS 4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe 2SiS 4 and Fe 2GeS 4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe 2SiS 4 and Fe 2GeS 4 as solar absorber material is presented.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Delaware State University
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Contributing Org.:
Delaware State University, University of Delaware Institute of Energy Conversion
OSTI Identifier:
1165391
Report Number(s):
DOE-DSU-6322
Journal ID: ISSN 1946--4274
DOE Contract Number:  
EE0006322
Resource Type:
Conference
Resource Relation:
Journal Name: MRS Proceedings; Journal Volume: 1670; Conference: 2014 MRS Spring Meeting, San Francisco, CA, April 21-25, 2014
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; photovoltaic; thin film; grain size

Citation Formats

Orefuwa, Samuel A., Lai, Cheng-Yu, Dobson, Kevin D., Ni, Chaoying, and Radu, Daniela R. Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe2SiS4 and Fe2GeS4 Photovoltaics. United States: N. p., 2014. Web. doi:10.1557/opl.2014.507.
Orefuwa, Samuel A., Lai, Cheng-Yu, Dobson, Kevin D., Ni, Chaoying, & Radu, Daniela R. Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe2SiS4 and Fe2GeS4 Photovoltaics. United States. doi:10.1557/opl.2014.507.
Orefuwa, Samuel A., Lai, Cheng-Yu, Dobson, Kevin D., Ni, Chaoying, and Radu, Daniela R. Mon . "Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe2SiS4 and Fe2GeS4 Photovoltaics". United States. doi:10.1557/opl.2014.507. https://www.osti.gov/servlets/purl/1165391.
@article{osti_1165391,
title = {Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe2SiS4 and Fe2GeS4 Photovoltaics},
author = {Orefuwa, Samuel A. and Lai, Cheng-Yu and Dobson, Kevin D. and Ni, Chaoying and Radu, Daniela R.},
abstractNote = {Fe2SiS4 and Fe2GeS4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe2SiS4 or Fe2GeS4 have been reported to date. In the presented work, nanoprecursors to Fe2SiS4 and Fe2GeS4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe2SiS4 and Fe2GeS4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe2SiS4 and Fe2GeS4 as solar absorber material is presented.},
doi = {10.1557/opl.2014.507},
journal = {MRS Proceedings},
number = ,
volume = 1670,
place = {United States},
year = {Mon May 12 00:00:00 EDT 2014},
month = {Mon May 12 00:00:00 EDT 2014}
}

Conference:
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