Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)
- Univ. of Texas at Arlington, Arlington, TX (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Univ. of Toronto, Toronto, ON (Canada)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ., Nanjing (People's Republic of China)
Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-δ films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. Furthermore, the integration of single crystalline YBa2Cu3O7-δ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1438311
- Report Number(s):
- BNL-205667-2018-JAAM; PII: 1544
- Journal Information:
- Bulletin of Materials Science, Vol. 41, Issue 1; ISSN 0250-4707
- Publisher:
- Indian Academy of Sciences/SpringerCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
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journal | July 2019 |
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