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Title: Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)

Journal Article · · Bulletin of Materials Science
 [1]; ORCiD logo [2];  [3];  [4];  [1];  [1];  [1];  [1];  [3];  [1]
  1. Univ. of Texas at Arlington, Arlington, TX (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. of Toronto, Toronto, ON (Canada)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ., Nanjing (People's Republic of China)

Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-δ films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. Furthermore, the integration of single crystalline YBa2Cu3O7-δ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012704
OSTI ID:
1438311
Report Number(s):
BNL-205667-2018-JAAM; PII: 1544
Journal Information:
Bulletin of Materials Science, Vol. 41, Issue 1; ISSN 0250-4707
Publisher:
Indian Academy of Sciences/SpringerCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

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