Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO3 Films

Roth, Robert; Guo, Er-Jia; Rafique, Mohsin; Dorr, Kathrin

doi:10.1002/pssb.201700486

Title: Field-Polarity-Dependent Domain Growth in Epitaxial BaTiO₃ Films

Journal Article · Fri Mar 23 00:00:00 EDT 2018 · Physica Status Solidi B. Basic Solid State Physics

DOI:https://doi.org/10.1002/pssb.201700486· OSTI ID:1436925

^[1];

^[2];

^[3]; Dorr, Kathrin ^[4]

Martin Luther Univ. Halle-Wittenberg (Germany)
Martin Luther Univ. Halle-Wittenberg (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Tsinghua Univ., Beijing (China); COMSATS Inst. of Information Technology, Islamabad (Pakistan)
Martin Luther Univ. Halle-Wittenberg (Germany); Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany)

The growth of circular tip-induced domains has been studied in epitaxial BaTiO₃ (BTO) films as a function of writing voltage and time using piezoresponse force microscopy (PFM). While abundant for Pb(Zr,Ti)O₃ (PZT) films, such studies are rare for BTO. Strong relaxation of written domains is observed in the form of reduction of the PFM amplitude inside the area of written domains which occurs additionally to a decrease of the domain radius. The domain wall velocity observed for negative tip voltage is systematically smaller than that for positive tip voltage. Based on maps of the positive and negative switching fields, the effective driving field for both polarities has been estimated. The polarity-dependent effective field cannot account for the different velocities, indicating a polarity-dependent mobility of the domain walls.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1436925

Journal Information:: Physica Status Solidi B. Basic Solid State Physics, Vol. 255, Issue 7; ISSN 0370-1972

Publisher:: Wiley-BlackwellCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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