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Title: Control of thermal expansion in a low-density framework modification of silicon

Authors:
; ; ; ; ;  [1];  [2];  [2];  [2]
  1. IIT
  2. (
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
DOE - BASIC ENERGY SCIENCES NSF
OSTI Identifier:
1436777
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Beekman, Matt, Kaduk, James A., Wong-Ng, Winnie, Troesch, Michael, Lee, Glenn S., Nolas, George S., Cal. Polytech.), USF), and NIST). Control of thermal expansion in a low-density framework modification of silicon. United States: N. p., 2018. Web. doi:10.1063/1.5027229.
Beekman, Matt, Kaduk, James A., Wong-Ng, Winnie, Troesch, Michael, Lee, Glenn S., Nolas, George S., Cal. Polytech.), USF), & NIST). Control of thermal expansion in a low-density framework modification of silicon. United States. doi:10.1063/1.5027229.
Beekman, Matt, Kaduk, James A., Wong-Ng, Winnie, Troesch, Michael, Lee, Glenn S., Nolas, George S., Cal. Polytech.), USF), and NIST). Mon . "Control of thermal expansion in a low-density framework modification of silicon". United States. doi:10.1063/1.5027229.
@article{osti_1436777,
title = {Control of thermal expansion in a low-density framework modification of silicon},
author = {Beekman, Matt and Kaduk, James A. and Wong-Ng, Winnie and Troesch, Michael and Lee, Glenn S. and Nolas, George S. and Cal. Polytech.) and USF) and NIST)},
abstractNote = {},
doi = {10.1063/1.5027229},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 112,
place = {United States},
year = {2018},
month = {4}
}