skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: n-type doping and morphology of GaAs nanowires in Aerotaxy

Abstract

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10 -3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 10 19 cm -3 with TESn flow fraction and both alloyingmore » and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.« less

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Lund Univ. (Sweden)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1436075
Report Number(s):
NREL/JA-5900-71455
Journal ID: ISSN 0957-4484
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 29; Journal Issue: 28; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; GaAs nanowires; n-type doping; Aerotaxy

Citation Formats

Metaferia, Wondwosen, Sivakumar, Sudhakar, Persson, Axel R., Geijselaers, Irene, Wallenberg, L. Reine, Deppert, Knut, Samuelson, Lars, and Magnusson, Martin H. n-type doping and morphology of GaAs nanowires in Aerotaxy. United States: N. p., 2018. Web. doi:10.1088/1361-6528/aabec0.
Metaferia, Wondwosen, Sivakumar, Sudhakar, Persson, Axel R., Geijselaers, Irene, Wallenberg, L. Reine, Deppert, Knut, Samuelson, Lars, & Magnusson, Martin H. n-type doping and morphology of GaAs nanowires in Aerotaxy. United States. doi:10.1088/1361-6528/aabec0.
Metaferia, Wondwosen, Sivakumar, Sudhakar, Persson, Axel R., Geijselaers, Irene, Wallenberg, L. Reine, Deppert, Knut, Samuelson, Lars, and Magnusson, Martin H. Thu . "n-type doping and morphology of GaAs nanowires in Aerotaxy". United States. doi:10.1088/1361-6528/aabec0. https://www.osti.gov/servlets/purl/1436075.
@article{osti_1436075,
title = {n-type doping and morphology of GaAs nanowires in Aerotaxy},
author = {Metaferia, Wondwosen and Sivakumar, Sudhakar and Persson, Axel R. and Geijselaers, Irene and Wallenberg, L. Reine and Deppert, Knut and Samuelson, Lars and Magnusson, Martin H.},
abstractNote = {Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.},
doi = {10.1088/1361-6528/aabec0},
journal = {Nanotechnology},
number = 28,
volume = 29,
place = {United States},
year = {Thu May 10 00:00:00 EDT 2018},
month = {Thu May 10 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share: