Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang, Yuxuan; Chen, Zhaoying; Li, Wenbo; Arehart, Aaron R.; Ringel, Steven A.; Zhao, Hongping

doi:10.1002/pssa.202000469

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Journal Article · Fri Jan 15 00:00:00 EST 2021 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.202000469· OSTI ID:1804818

Zhang, Yuxuan ^[1]; Chen, Zhaoying ^[1]; Li, Wenbo ^[1]; Arehart, Aaron R. ^[1]; Ringel, Steven A. ^[1]; ^[2]

Department of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USA
Department of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USA, Department of Materials Science and Engineering The Ohio State University Columbus OH 43210 USA

The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h ⁻¹ is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH ₄ flow, an electron concentration as low as 4 × 10 ¹⁵ cm ⁻³ in n ⁻ ‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h ⁻¹ . Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 10 ¹⁶ cm ⁻³ . GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm ² V ⁻¹ s ⁻¹ as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AR0001036

OSTI ID:: 1804818

Alternate ID(s):: OSTI ID: 1848345
OSTI ID: 23006235

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Issue: 6 Vol. 218; ISSN 1862-6300

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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