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Title: External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

Journal Article · · Optical Engineering
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  1. Stony Brook Univ., Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
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Here, the external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ~25 meV of tuning range.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012704
OSTI ID:
1433981
Report Number(s):
BNL-203521-2018-JAAM
Journal Information:
Optical Engineering, Vol. 57, Issue 01; ISSN 0091-3286
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (12)

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Gain spectra in GaAs double−heterostructure injection lasers journal March 1975
Reliable mid-infrared laterally-coupled distributed-feedback interband cascade lasers journal August 2014
Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers journal November 2017
Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm journal May 2016
Interband Cascade Lasers With Low Threshold Powers and High Output Powers journal July 2013
High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 [micro sign]m journal January 2012
Cascade Type-I Quantum Well GaSb-Based Diode Lasers journal May 2016
Cascade type-I quantum well diode lasers emitting 960 mW near 3  μ m journal October 2014
Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature journal September 2014
InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm journal January 2013
High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45  μ m wavelength range journal July 2015

Cited By (2)

Single-frequency mid-infrared waveguide laser journal January 2019
External cavity type-I quantum well cascade diode lasers with a tuning range of 440  nm near 3  μm journal January 2018

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Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
infrared and far-infrared lasers
semiconductor lasers
distributed-feedback lasers