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Title: Energy storage device with large charge separation

Patent ·
OSTI ID:1433228

High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Research Organization:
Stanford Univ., CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000069
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
Patent Number(s):
9,935,208
Application Number:
15/060,239
OSTI ID:
1433228
Resource Relation:
Patent File Date: 2016 Mar 03
Country of Publication:
United States
Language:
English

References (2)