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U.S. Department of Energy
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Energy storage device with large charge separation

Patent ·
OSTI ID:1246835
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
Research Organization:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000069;
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
Patent Number(s):
9,312,398
Application Number:
13/135,798
OSTI ID:
1246835
Country of Publication:
United States
Language:
English

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