Microstructure evolution of T91 irradiated in the BOR60 fast reactor

Jiao, Z.; Taller, S.; Field, K.; Yeli, G.; Moody, M. P.; Was, G. S.

doi:10.1016/j.jnucmat.2018.03.024

Title: Microstructure evolution of T91 irradiated in the BOR60 fast reactor

Journal Article · Wed Mar 14 00:00:00 EDT 2018 · Journal of Nuclear Materials

DOI:https://doi.org/10.1016/j.jnucmat.2018.03.024· OSTI ID:1432160

Jiao, Z. ^[1]; Taller, S. ^[1];

^[2]; Yeli, G. ^[3]; Moody, M. P. ^[3]; Was, G. S. ^[1]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Univ. of Oxford (United Kingdom). Dept. of Materials

In this paper, microstructures of T91 neutron irradiated in the BOR60 reactor at five temperatures between 376 °C and 524 °C to doses between 15.4 and 35.1 dpa were characterized using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), and atom probe tomography (APT). Type a<100> dislocation loops were observed at 376–415 °C and network dislocations dominated at 460 °C and 524 °C. Cavities appeared in a bimodal distribution with a high density of small bubbles less than 2 nm at irradiation temperatures between 376 °C and 415 °C. Small bubbles were also observed at 460 °C and 524 °C but cavities greater than 2 nm were absent. Enrichment of Cr, Ni, and Si at the grain boundary was observed at all irradiation temperatures. Radiation-induced segregation (RIS) of Cr, Ni and Si appeared to saturate at 17.1 dpa and 376 °C. The temperature dependence of RIS of Cr, Ni and Si at the grain boundary, which showed a peak Cr enrichment temperature of 460 °C and a lower peak Ni and Si enrichment temperature of ~400 °C, was consistent with observations of RIS of Cr in proton irradiated T91, suggesting that the same RIS mechanism may also apply to BOR60 irradiated T91. G-phase and Cu-rich precipitates were observed at 376–415 °C but were absent at 460 °C and 524 °C. Finally, the absence of G-phase at 524 °C could be related to the minimal segregation of Ni and Si in that condition.

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Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Oxford (United Kingdom)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE), Reactor Fleet and Advanced Reactor Development. Nuclear Reactor Technologies; USDOE Office of Nuclear Energy (NE), Fuel Cycle Technologies (NE-5); Engineering and Physical Sciences Research Council (EPSRC)

Grant/Contract Number:: AC05-00OR22725; AC07-05ID14517; NE0000639; EP/L025817/1; EP/M022803/1; AC07-051D14517

OSTI ID:: 1432160

Alternate ID(s):: OSTI ID: 1548544

Journal Information:: Journal of Nuclear Materials, Vol. 504; ISSN 0022-3115

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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