Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

Wang, Zhuo; Samaraweera, R. L.; Reichl, C.; Wegscheider, W.; Mani, R. G.

doi:10.1038/srep38516

Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

Journal Article · Tue Dec 06 23:00:00 EST 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep38516· OSTI ID:1430128

Wang, Zhuo ^[1]; Samaraweera, R. L. ^[2]; Reichl, C. ^[3]; Wegscheider, W. ^[3]; Mani, R. G. ^[2]

Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy; None
Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy
Federal Inst. of Technology, Zurich (Switzerland). Lab.fur Festkorperphysik

Electron-heating induced by a tunable, supplementary dc-current (I_dc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest I_dc. A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ₁, which undergoes sign reversal from positive to negative with increasing I_dc, and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

View Accepted Manuscript (DOE)

Research Organization:: Georgia State Univ., Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0001762

OSTI ID:: 1430128

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES Samaraweera, R. L.; Liu, H. -C.; Wang, Z. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-05351-8	journal	July 2017
Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES Samaraweera, R. L.; Liu, H. -C.; Gunawardana, B. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-28359-0	journal	July 2018
Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands Kriisa, A.; Samaraweera, R. L.; Heimbeck, M. S. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-39186-2	journal	February 2019
Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene Mani, R. G.; Kriisa, A.; Munasinghe, R. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-43866-4	journal	May 2019
Microscopic model for radiation-induced magnetoresistance oscillations excited by circularly polarized radiation Iñarrea, Jesús Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-46057-3	journal	July 2019
Radiation-induced resistance oscillations in 2D electron systems with strong Rashba coupling Inarrea, Jesus arXiv https://doi.org/10.48550/arxiv.1701.00379	preprint	January 2017
Influence of Microwave Excitation‐Power on the Narrow Negative Magnetoresistance Effect Around B = 0 T in the Ultra‐High Mobility GaAs/AlGaAs 2DES Samaraweera, Rasanga L.; Gunawardana, Binuka; Kriisa, Annika physica status solidi (b), Vol. 256, Issue 6 https://doi.org/10.1002/pssb.201800610	journal	February 2019
Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation Samaraweera, R. L.; Gunawardana, B.; Nanayakkara, T. R. Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-019-57331-9	journal	January 2020
Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands Kriisa, Annika; Samaraweera, Rasanga L.; Heimbeck, Martin S. ETH Zurich https://doi.org/10.3929/ethz-b-000328422	text	January 2019
Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation Samaraweera, Rasanga L.; Gunawardana, Binuka; Nanayakkara, Tharanga R. ETH Zurich https://doi.org/10.3929/ethz-b-000396543	text	January 2020

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Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

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