Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance

Somphonsane, R.; Ramamoorthy, H.; He, G.; Nathawat, J.; Kwan, C. -P.; Arabchigavkani, N.; Lee, Y. -H.; Fransson, J.; Bird, J. P.

doi:10.1038/s41598-017-10367-1

Title: Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance

Journal Article · Mon Sep 04 00:00:00 EDT 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-10367-1· OSTI ID:1429882

Somphonsane, R. ^[1]; Ramamoorthy, H. ^[2]; He, G. ^[2];

^[2]; Kwan, C. -P. ^[3]; Arabchigavkani, N. ^[3]; Lee, Y. -H. ^[2]; Fransson, J. ^[4];

^[5]

King Mongkut’s Institute of Technology Ladkrabang, Bangkok (Thailand). Department of Physics
University at Buffalo, the State University of New York, Buffalo, NY (United States). Department of Electrical Engineering
University at Buffalo, the State University of New York, Buffalo, NY (United States). Department of Physics
Uppsala Univ. (Sweden). Department of Physics and Astronomy
University at Buffalo, the State University of New York, Buffalo, NY (United States). Department of Electrical Engineering; Chiba University (Japan). Graduate School of Advanced Integration Science

We explore the contributions to the electrical resistance of monolayer and bilayer graphene, revealing transitions between different regimes of charge carrier scattering. In monolayer graphene at low densities, a nonmonotonic variation of the resistance is observed as a function of temperature. Such behaviour is consistent with the influence of scattering from screened Coulomb impurities. At higher densities, the resistance instead varies in a manner consistent with the influence of scattering from acoustic and optical phonons. The crossover from phonon-, to charged-impurity, limited conduction occurs once the concentration of gate-induced carriers is reduced below that of the residual carriers. In bilayer graphene, the resistance exhibits a monotonic decrease with increasing temperature for all densities, with the importance of short-range impurity scattering resulting in a “universal” density-independent (scaled) conductivity at high densities. At lower densities, the conductivity deviates from this universal curve, pointing to the importance of thermal activation of carriers out of charge puddles. These various assignments, in both systems, are made possible by an approach of “differential-conductance mapping”, which allows us to suppress quantum corrections to reveal the underlying mechanisms governing the resistivity.

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Research Organization:: State Univ. of New York (SUNY), Plattsburgh, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-04ER46180

OSTI ID:: 1429882

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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