Excitations Partition into Two Distinct Populations in Bulk Perovskites
Journal Article
·
· Advanced Optical Materials
- Univ. of Chicago, IL (United States). James Franck Inst., and Inst. for Biophysical Dynamics
- Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Argonne National Lab. (ANL), Argonne, IL (United States).Chemical Sciences and Engineering Division
- Univ. of Chicago, IL (United States). Inst. for Molecular Engineering; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Organolead halide perovskites convert optical excitations to charge carriers with remarkable efficiency in optoelectronic devices. Previous research predominantly documents dynamics in perovskite thin films; however, extensive disorder in this platform may obscure the observed carrier dynamics. Here in this study, carrier dynamics in perovskite single-domain single crystals is examined by performing transient absorption spectroscopy in a transmissive geometry. Two distinct sets of carrier populations that coexist at the same radiation fluence, but display different decay dynamics, are observed: one dominated by second-order recombination and the other by third-order recombination. Based on ab initio simulations, this observation is found to be most consistent with the hypothesis that free carriers and localized carriers coexist due to polaron formation. Lastly, the calculations suggest that polarons will form in both CH3NH3PbBr3 and CH3NH3PbI3 crystals, but that they are more pronounced in CH3NH3PbBr3. Single-crystal CH3NH3PbBr3 could represent the key to understanding the impact of polarons on the transport properties of perovskite optoelectronic devices.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- Alfred P. Sloan Foundation; National Science Foundation (NSF); U.S. Department of Defense (DOD). National Security Science and Engineering Faculty Fellowship (NSSEFF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1427475
- Alternate ID(s):
- OSTI ID: 1416406
OSTI ID: 1433053
- Journal Information:
- Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 5 Vol. 6; ISSN 2195-1071
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Structural fluctuations cause spin-split states in tetragonal (CH 3 NH 3 )PbI 3 as evidenced by the circular photogalvanic effect
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journal | September 2018 |
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