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Title: Excitations Partition into Two Distinct Populations in Bulk Perovskites

Journal Article · · Advanced Optical Materials
 [1];  [2];  [3];  [1];  [1];  [1];  [4];  [5]; ORCiD logo [1]
  1. Univ. of Chicago, IL (United States). James Franck Inst., and Inst. for Biophysical Dynamics
  2. Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  4. Argonne National Lab. (ANL), Argonne, IL (United States).Chemical Sciences and Engineering Division
  5. Univ. of Chicago, IL (United States). Inst. for Molecular Engineering; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division

Abstract Organolead halide perovskites convert optical excitations to charge carriers with remarkable efficiency in optoelectronic devices. Previous research predominantly documents dynamics in perovskite thin films; however, extensive disorder in this platform may obscure the observed carrier dynamics. Here, carrier dynamics in perovskite single‐domain single crystals is examined by performing transient absorption spectroscopy in a transmissive geometry. Two distinct sets of carrier populations that coexist at the same radiation fluence, but display different decay dynamics, are observed: one dominated by second‐order recombination and the other by third‐order recombination. Based on ab initio simulations, this observation is found to be most consistent with the hypothesis that free carriers and localized carriers coexist due to polaron formation. The calculations suggest that polarons will form in both CH 3 NH 3 PbBr 3 and CH 3 NH 3 PbI 3 crystals, but that they are more pronounced in CH 3 NH 3 PbBr 3 . Single‐crystal CH 3 NH 3 PbBr 3 could represent the key to understanding the impact of polarons on the transport properties of perovskite optoelectronic devices.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
Alfred P. Sloan Foundation; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES); U.S. Department of Defense (DOD). National Security Science and Engineering Faculty Fellowship (NSSEFF)
Grant/Contract Number:
AC02-06CH11357; DE‐AC02‐06CH11357
OSTI ID:
1427475
Alternate ID(s):
OSTI ID: 1416406
Journal Information:
Advanced Optical Materials, Vol. 6, Issue 5; ISSN 2195-1071
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Cited By (1)

Structural fluctuations cause spin-split states in tetragonal (CH 3 NH 3 )PbI 3 as evidenced by the circular photogalvanic effect journal September 2018

Figures / Tables (4)


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