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Title: Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]

Authors:
 [1]; ORCiD logo [2];  [3]; ORCiD logo [2];  [3]
  1. Department of Applied Physics, Stanford University, Stanford, California 94305, USA, Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
  3. Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1426354
Grant/Contract Number:  
SC0001293
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 11; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Kaifeng, Xiao, T. Patrick, Santhanam, Parthiban, Yablonovitch, Eli, and Fan, Shanhui. Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]. United States: N. p., 2018. Web. doi:10.1063/1.5023511.
Chen, Kaifeng, Xiao, T. Patrick, Santhanam, Parthiban, Yablonovitch, Eli, & Fan, Shanhui. Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]. United States. doi:10.1063/1.5023511.
Chen, Kaifeng, Xiao, T. Patrick, Santhanam, Parthiban, Yablonovitch, Eli, and Fan, Shanhui. Wed . "Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]". United States. doi:10.1063/1.5023511.
@article{osti_1426354,
title = {Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]},
author = {Chen, Kaifeng and Xiao, T. Patrick and Santhanam, Parthiban and Yablonovitch, Eli and Fan, Shanhui},
abstractNote = {},
doi = {10.1063/1.5023511},
journal = {Journal of Applied Physics},
number = 11,
volume = 123,
place = {United States},
year = {Wed Mar 21 00:00:00 EDT 2018},
month = {Wed Mar 21 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 15, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034