Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]

Journal Article · Wed Mar 21 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5023511· OSTI ID:1426354

Chen, Kaifeng ^[1]; Xiao, T. Patrick  ^[2]; Santhanam, Parthiban ^[3]; Yablonovitch, Eli  ^[2]; Fan, Shanhui ^[3]

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1. Department of Applied Physics, Stanford University, Stanford, California 94305, USA, Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
3. Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, California 94305, USA

• Sponsoring Organization: USDOE
• Grant/Contract Number: SC0001293
• OSTI ID: 1426354
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 123 Journal Issue: 11; ISSN 0021-8979
• Publisher: American Institute of Physics
• Country of Publication: United States
• Language: English