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Title: Semiconductor Manufacturing Modeling Final Report CRADA No. TC-1069-94

Abstract

The program is divided into four (4) project areas: Bulk processing, interconnects, etch, and ab initio computations.

Authors:
 [1];  [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Semiconductor Research Corp., Durham, NC (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1426099
Report Number(s):
LLNL-TR-747341
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING

Citation Formats

Fluss, M. J., and Goosens, R. Semiconductor Manufacturing Modeling Final Report CRADA No. TC-1069-94. United States: N. p., 2018. Web. doi:10.2172/1426099.
Fluss, M. J., & Goosens, R. Semiconductor Manufacturing Modeling Final Report CRADA No. TC-1069-94. United States. doi:10.2172/1426099.
Fluss, M. J., and Goosens, R. Tue . "Semiconductor Manufacturing Modeling Final Report CRADA No. TC-1069-94". United States. doi:10.2172/1426099. https://www.osti.gov/servlets/purl/1426099.
@article{osti_1426099,
title = {Semiconductor Manufacturing Modeling Final Report CRADA No. TC-1069-94},
author = {Fluss, M. J. and Goosens, R.},
abstractNote = {The program is divided into four (4) project areas: Bulk processing, interconnects, etch, and ab initio computations.},
doi = {10.2172/1426099},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 06 00:00:00 EST 2018},
month = {Tue Mar 06 00:00:00 EST 2018}
}

Technical Report:

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