Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 − x As Nanostructures

Fallahi, S.; Nakamura, J. R.; Gardner, G. C.; Yannell, M. M.; Manfra, M. J.

doi:10.1103/PhysRevApplied.9.034008

Title: Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in $GaAs/ {Al}_{x} {Ga}_{1 - x} As$ Nanostructures

Journal Article · Tue Mar 13 00:00:00 EDT 2018 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.9.034008· OSTI ID:1425719

Fallahi, S.; Nakamura, J. R.; Gardner, G. C.; Yannell, M. M.; Manfra, M. J.

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0006671

OSTI ID:: 1425719

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Vol. 9 Journal Issue: 3; ISSN 2331-7019

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 4 works

Citation information provided by
Web of Science

References (24)

Noise and reproducible structure in a GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As one-dimensional channel Cobden, D. H.; Patel, N. K.; Pepper, M. Physical Review B, Vol. 44, Issue 4 https://doi.org/10.1103/PhysRevB.44.1938	journal	July 1991
Resistance fluctuations in ${G a A s / A l}_{x} {Ga}_{1 - x} As$ quantum point contact and Hall bar structures Kurdak, Ç.; Chen, C. -J.; Tsui, D. C. Physical Review B, Vol. 56, Issue 15 https://doi.org/10.1103/PhysRevB.56.9813	journal	October 1997
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots Petta, J. R. Science, Vol. 309, Issue 5744 https://doi.org/10.1126/science.1116955	journal	September 2005
Shallow and deep donors in direct-gap $n$ -type ${Al}_{x} {Ga}_{1 - x} A s : S i$ grown by molecular-beam epitaxy Schubert, E. F.; Ploog, K. Physical Review B, Vol. 30, Issue 12 https://doi.org/10.1103/PhysRevB.30.7021	journal	December 1984
Crossover from ‘mesoscopic’ to ‘universal’ phase for electron transmission in quantum dots Avinun-Kalish, M.; Heiblum, M.; Zarchin, O. Nature, Vol. 436, Issue 7050 https://doi.org/10.1038/nature03899	journal	July 2005
Suppression of low-frequency charge noise in gates-defined GaAs quantum dots You, Jie; Li, Hai-Ou; Wang, Ke Applied Physics Letters, Vol. 107, Issue 23 https://doi.org/10.1063/1.4937271	journal	December 2015
Modulation of Noise in Submicron $G a A s / A l G a A s$ Hall Devices by Gating Li, Yongqing; Ren, Cong; Xiong, Peng Physical Review Letters, Vol. 93, Issue 24 https://doi.org/10.1103/PhysRevLett.93.246602	journal	December 2004
High-fidelity entangling gate for double-quantum-dot spin qubits Nichol, John M.; Orona, Lucas A.; Harvey, Shannon P. npj Quantum Information, Vol. 3, Issue 1 https://doi.org/10.1038/s41534-016-0003-1	journal	January 2017
Field-effect-induced two-dimensional electron gas utilizing modulation-doped ohmic contacts Mondal, Sumit; Gardner, Geoffrey C.; Watson, John D. Solid State Communications, Vol. 197 https://doi.org/10.1016/j.ssc.2014.08.011	journal	November 2014
Suppression of impurity scattering in a one-dimensional wire Timp, G.; Behringer, R. E.; Cunningham, J. E. Physical Review B, Vol. 42, Issue 14 https://doi.org/10.1103/PhysRevB.42.9259	journal	November 1990
Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device Li, Hai-Ou; Cao, Gang; Xiao, Ming Journal of Applied Physics, Vol. 116, Issue 17 https://doi.org/10.1063/1.4900915	journal	November 2014
Investigation of persistent photoconductivity in Si-dopedn-Al x Ga1?x as grown by molecular beam epitaxy K�nzel, H.; Fischer, A.; Knecht, J. Applied Physics A Solids and Surfaces, Vol. 32, Issue 2 https://doi.org/10.1007/BF00617831	journal	October 1983
Noise Suppression Using Symmetric Exchange Gates in Spin Qubits Martins, Frederico; Malinowski, Filip K.; Nissen, Peter D. Physical Review Letters, Vol. 116, Issue 11 https://doi.org/10.1103/PhysRevLett.116.116801	journal	March 2016
Background charge fluctuation in a GaAs quantum dot device Jung, S. W.; Fujisawa, T.; Hirayama, Y. Applied Physics Letters, Vol. 85, Issue 5 https://doi.org/10.1063/1.1777802	journal	August 2004
Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures Hitachi, Kenichi; Ota, Takeshi; Muraki, Koji Applied Physics Letters, Vol. 102, Issue 19 https://doi.org/10.1063/1.4806984	journal	May 2013
Origin of switching noise in $Ga As ∕ {Al}_{x} {Ga}_{1 - x} As$ lateral gated devices Pioro-Ladrière, M.; Davies, John H.; Long, A. R. Physical Review B, Vol. 72, Issue 11 https://doi.org/10.1103/PhysRevB.72.115331	journal	September 2005
$I n S i t u$ Reduction of Charge Noise in $GaAs / {Al}_{x} {Ga}_{1 - x} As$ Schottky-Gated Devices Buizert, Christo; Koppens, Frank H. L.; Pioro-Ladrière, Michel Physical Review Letters, Vol. 101, Issue 22 https://doi.org/10.1103/PhysRevLett.101.226603	journal	November 2008
Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy Künzel, H.; Ploog, K.; Wünstel, K. Journal of Electronic Materials, Vol. 13, Issue 2 https://doi.org/10.1007/BF02656681	journal	March 1984
Scattering of a two-dimensional electron gas by a correlated system of ionized donors Buks, E.; Heiblum, M.; Levinson, Y. Semiconductor Science and Technology, Vol. 9, Issue 11 https://doi.org/10.1088/0268-1242/9/11/001	journal	November 1994
Energetics of DX -center formation in GaAs and ${Al}_{x}$ ${Ga}_{1 - x}$ As alloys Chadi, D. J.; Chang, K. J. Physical Review B, Vol. 39, Issue 14 https://doi.org/10.1103/PhysRevB.39.10063	journal	May 1989
Time-irreversible random telegraph signal due to current along a single hopping chain Cobden, D. H.; Savchenko, A.; Pepper, M. Physical Review Letters, Vol. 69, Issue 3 https://doi.org/10.1103/PhysRevLett.69.502	journal	July 1992
nextnano: General Purpose 3-D Simulations Birner, S.; Zibold, T.; Andlauer, T. IEEE Transactions on Electron Devices, Vol. 54, Issue 9 https://doi.org/10.1109/TED.2007.902871	journal	September 2007
Correlated charged donors and strong mobility enhancement in a two-dimensional electron gas Buks, E.; Heiblum, M.; Shtrikman, Hadas Physical Review B, Vol. 49, Issue 20 https://doi.org/10.1103/PhysRevB.49.14790	journal	May 1994
Discovery of a new photoinduced electron trap state shallower than the DX center in Si doped Al _x Ga _{1− x} As Jia, Y. B.; Li, M. F.; Zhou, J. Journal of Applied Physics, Vol. 66, Issue 11 https://doi.org/10.1063/1.343672	journal	December 1989

Similar Records

Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in

GaAs/ {Al}_{x} {Ga}_{1 - x} As

Nanostructures

Journal Article · Thu Mar 01 00:00:00 EST 2018 · Physical Review Applied · OSTI ID:1425719

Fallahi, S.; Nakamura, J. R.; Gardner, G. C.; +2 more

Doping evolution of the absolute value of the London penetration depth and superfluid density in single crystals of

Ba {({Fe}_{1 - x} {Co}_{x})}_{2} {As}_{2}

Journal Article · Sun Aug 01 00:00:00 EDT 2010 · Physical Review. B, Condensed Matter and Materials Physics · OSTI ID:1425719

Gordon, R. T.; Kim, H.; Salovich, N.; +8 more

London penetration depth and superfluid density of single-crystalline

{Fe}_{1 + y} ({Te}_{1 - x} {Se}_{x})

and

{Fe}_{1 + y} ({Te}_{1 - x} S_{x})

Journal Article · Sat May 01 00:00:00 EDT 2010 · Physical Review. B, Condensed Matter and Materials Physics · OSTI ID:1425719

Kim, H.; Martin, C.; Gordon, R. T.; +9 more

Title: Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 − x As Nanostructures

Citation Formats

References (24)

Similar Records

Related Subjects

Title: Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in $GaAs/ {Al}_{x} {Ga}_{1 - x} As$ Nanostructures