Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1-xAs Nanostructures

Fallahi, S.; Nakamura, J. R.; Gardner, G. C.; Yannell, M. M.; Manfra, M. J.

doi:10.1103/physrevapplied.9.034008

Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in $GaAs/ {Al}_{x} {Ga}_{1 - x} As$ Nanostructures

Journal Article · 01 March 2018 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.9.034008· OSTI ID:1540703

Fallahi, S.; Nakamura, J. R.; Gardner, G. C.; Yannell, M. M.; Manfra, M. J.

Not provided.

Research Organization:: Purdue Univ., West Lafayette, IN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0006671

OSTI ID:: 1540703

Journal Information:: Physical Review Applied, Vol. 9, Issue 3; ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

References (24)

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