Influence of Thermal Annealing on Free Carrier Concentration in (GaN)1–x(ZnO)x Semiconductors

Huang, Huafeng; Sklute, Elizabeth C.; Lehuta, Keith A.; Kittilstved, Kevin R.; Glotch, Timothy D.; Liu, Mingzhao; Khalifah, Peter G.

doi:10.1021/acs.jpcc.7b06455

Title: Influence of Thermal Annealing on Free Carrier Concentration in (GaN)_1–x(ZnO)_x Semiconductors

Journal Article · Wed Sep 13 00:00:00 EDT 2017 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.7b06455· OSTI ID:1425025

Huang, Huafeng ^[1]; Sklute, Elizabeth C. ^[1]; Lehuta, Keith A. ^[2];

^[2]; Glotch, Timothy D. ^[1];

^[3];

^[4]

Stony Brook Univ., NY (United States)
Univ. of Massachusetts, Amherst, MA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)

It has been previously demonstrated that the efficiency of (GaN)_1–x(ZnO)_x semiconductors for solar water splitting can be improved by thermal annealing, though the origin of this improvement was not resolved. In the present work, it is shown that annealing reduces the free carrier (electron) concentration of (GaN)_1–x(ZnO)_x. The time-, temperature-, and atmosphere-dependent changes were followed through two simple techniques: indirect diffuse reflectance measurements from 0.5 to 3.0 eV which show very high sensitivity to the free carrier response at the lowest energies and EPR measurements which directly probe the number of unpaired electrons. For the thermal annealing of investigated compositions, it is found that temperatures of 250 °C and below do not measurably change the free carrier concentration, a gradual reduction of the free carrier concentration occurs over a time period of many hours at 350 °C, and the complete elimination of free carriers happens within an hour at 550 °C. These changes are driven by an oxidative process which is effectively suppressed under actively reducing atmospheres (H₂, NH₃) but which can still occur under nominally inert gases (N₂, Ar). Surprisingly, it is found that the N₂ gas released during thermal oxidation of (GaN)_1–x(ZnO)_x samples remains trapped within the solid matrix and is not expelled until temperatures of about 900 °C, a result directly confirmed through neutron pair-distribution fuction (PDF) measurements which show a new peak at the 1.1 Å bond length of molecular nitrogen after annealing. Preliminary comparative photoelectrochemical (PEC) measurements of the influence of free carrier concentration on photoactivity for water oxidation were carried out for a sample with x = 0.64. Samples annealed to eliminate free carriers exhibited no photoactivity for water oxidation, while a complex dependence on carrier concentration was observed for samples with intermediate free carrier concentrations. The methods demonstrated here provide an important approach for quantifying (and controlling) the carrier concentrations of semiconductors which are only available in the form of loose powders, as is commonly the case for oxynitride compounds.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1425025

Report Number(s):: BNL-200016-2018-JAAM; TRN: US1802007

Journal Information:: Journal of Physical Chemistry. C, Vol. 121, Issue 42; ISSN 1932-7447

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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References (39)

Powering the planet: Chemical challenges in solar energy utilization Lewis, N. S.; Nocera, D. G. Proceedings of the National Academy of Sciences, Vol. 103, Issue 43, p. 15729-15735 https://doi.org/10.1073/pnas.0603395103	journal	October 2006
Will Solar-Driven Water-Splitting Devices See the Light of Day? McKone, James R.; Lewis, Nathan S.; Gray, Harry B. Chemistry of Materials, Vol. 26, Issue 1 https://doi.org/10.1021/cm4021518	journal	September 2013
Solar Water Splitting Cells Walter, Michael G.; Warren, Emily L.; McKone, James R. Chemical Reviews, Vol. 110, Issue 11, p. 6446-6473 https://doi.org/10.1021/cr1002326	journal	November 2010
Photocatalyst releasing hydrogen from water Maeda, Kazuhiko; Teramura, Kentaro; Lu, Daling Nature, Vol. 440, Issue 7082 https://doi.org/10.1038/440295a	journal	March 2006
Photoreactions on LaTiO₂N under Visible Light Irradiation Kasahara, Asako; Nukumizu, Kota; Hitoki, Go The Journal of Physical Chemistry A, Vol. 106, Issue 29 https://doi.org/10.1021/jp025961+	journal	June 2002
Effect of post-calcination on photocatalytic activity of (Ga1−xZnx)(N1−xOx) solid solution for overall water splitting under visible light Maeda, K.; Teramura, K.; Domen, K. Journal of Catalysis, Vol. 254, Issue 2 https://doi.org/10.1016/j.jcat.2007.12.009	journal	March 2008
Photocatalytic Water Splitting: Recent Progress and Future Challenges Maeda, Kazuhiko; Domen, Kazunari The Journal of Physical Chemistry Letters, Vol. 1, Issue 18, p. 2655-2661 https://doi.org/10.1021/jz1007966	journal	September 2010
The Effect of Nitrogen Ion Implantation on the Photoactivity of TiO ₂ Rutile Single Crystals Diwald, Oliver; Thompson, Tracy L.; Goralski, Ed G. The Journal of Physical Chemistry B, Vol. 108, Issue 1 https://doi.org/10.1021/jp030529t	journal	January 2004
Photochemical Activity of Nitrogen-Doped Rutile TiO ₂ (110) in Visible Light Diwald, Oliver; Thompson, Tracy L.; Zubkov, Tykhon The Journal of Physical Chemistry B, Vol. 108, Issue 19 https://doi.org/10.1021/jp031267y	journal	April 2004
Photocatalytic Activity of SrTiO ₃ Codoped with Nitrogen and Lanthanum under Visible Light Illumination Miyauchi, Masahiro; Takashio, Minoru; Tobimatsu, Hiroki Langmuir, Vol. 20, Issue 1 https://doi.org/10.1021/la0353125	journal	January 2004
Variation of minority‐carrier diffusion length with carrier concentration in GaAs liquid‐phase epitaxial layers Casey, H. C.; Miller, B. I.; Pinkas, E. Journal of Applied Physics, Vol. 44, Issue 3 https://doi.org/10.1063/1.1662340	journal	March 1973
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence Kumakura, K.; Makimoto, T.; Kobayashi, N. Applied Physics Letters, Vol. 86, Issue 5 https://doi.org/10.1063/1.1861116	journal	January 2005
Infrared Absorption in $n$ -Type Silicon Spitzer, W.; Fan, H. Y. Physical Review, Vol. 108, Issue 2 https://doi.org/10.1103/PhysRev.108.268	journal	October 1957
Inorganic Materials as Catalysts for Photochemical Splitting of Water Osterloh, Frank E. Chemistry of Materials, Vol. 20, Issue 1 https://doi.org/10.1021/cm7024203	journal	January 2008
Synthesis and Characterization of Visible Light Absorbing (GaN) _{1– x} (ZnO) _x Semiconductor Nanorods Reinert, Alexandra A.; Payne, Candace; Wang, Limin Inorganic Chemistry, Vol. 52, Issue 15 https://doi.org/10.1021/ic400011n	journal	July 2013
Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSb Haga, Eijiro; Kimura, Hatsuo Journal of the Physical Society of Japan, Vol. 19, Issue 5 https://doi.org/10.1143/JPSJ.19.658	journal	May 1964
Infrared Absorption and Electron Effective Mass in $n$ -Type Gallium Arsenide Spitzer, W. G.; Whelan, J. M. Physical Review, Vol. 114, Issue 1 https://doi.org/10.1103/PhysRev.114.59	journal	April 1959
Free Carrier Absorption in Silicon Schroder, D. K.; Thomas, R. N.; Swartz, J. C. IEEE Journal of Solid-State Circuits, Vol. 13, Issue 1 https://doi.org/10.1109/JSSC.1978.1051012	journal	February 1978
Direct Kinetic Correlation of Carriers and Ferromagnetism in ${Co}^{2 +} : ZnO$ Kittilstved, Kevin R.; Schwartz, Dana A.; Tuan, Allan C. Physical Review Letters, Vol. 97, Issue 3 https://doi.org/10.1103/PhysRevLett.97.037203	journal	July 2006
Photoresponse of GaN:ZnO Electrode on FTO under Visible Light Irradiation Hashiguchi, Hiroshi; Maeda, Kazuhiko; Abe, Ryu Bulletin of the Chemical Society of Japan, Vol. 82, Issue 3 https://doi.org/10.1246/bcsj.82.401	journal	March 2009
Overall Water Splitting on (Ga ₁ _- _x Zn _x )(N ₁ _- _x O _x ) Solid Solution Photocatalyst: Relationship between Physical Properties and Photocatalytic Activity Maeda, Kazuhiko; Teramura, Kentaro; Takata, Tsuyoshi The Journal of Physical Chemistry B, Vol. 109, Issue 43 https://doi.org/10.1021/jp053499y	journal	November 2005
Efficient Overall Water Splitting under Visible-Light Irradiation on (Ga ₁ _- _x Zn _x )(N ₁ _- _x O _x ) Dispersed with Rh−Cr Mixed-Oxide Nanoparticles: Effect of Reaction Conditions on Photocatalytic Activity Maeda, Kazuhiko; Teramura, Kentaro; Masuda, Hideaki The Journal of Physical Chemistry B, Vol. 110, Issue 26 https://doi.org/10.1021/jp0616563	journal	July 2006
Growth and electronic properties of GaN/ZnO solid solution nanowires Han, Wei-Qiang; Zhang, Yan; Nam, Chang-Yong Applied Physics Letters, Vol. 97, Issue 8 https://doi.org/10.1063/1.3483132	journal	August 2010
Free Carrier Absorption Arising from Impurities in Semiconductors Visvanathan, S. Physical Review, Vol. 120, Issue 2 https://doi.org/10.1103/PhysRev.120.379	journal	October 1960
Infra-red Absorption in Semiconductors Fan, H. Y. Reports on Progress in Physics, Vol. 19, Issue 1 https://doi.org/10.1088/0034-4885/19/1/304	journal	January 1956
Infrared Absorption in $n$ -Type Germanium Fan, H. Y.; Spitzer, W.; Collins, R. J. Physical Review, Vol. 101, Issue 2 https://doi.org/10.1103/PhysRev.101.566	journal	January 1956
Infrared absorption in zinc oxide crystals Thomas, D. G. Journal of Physics and Chemistry of Solids, Vol. 10, Issue 1 https://doi.org/10.1016/0022-3697(59)90124-6	journal	April 1959
Optical Properties of Free Electrons in ZnO Weiher, R. L. Physical Review, Vol. 152, Issue 2 https://doi.org/10.1103/PhysRev.152.736	journal	December 1966
Electron scattering by ionized impurities in semiconductors Chattopadhyay, D.; Queisser, H. J. Reviews of Modern Physics, Vol. 53, Issue 4 https://doi.org/10.1103/RevModPhys.53.745	journal	October 1981
Effect of Hydrogen and Oxygen Evolution Cocatalysts on Photocatalytic Activity of GaN:ZnO: Impact of Cocatalysts on Water Splitting Activity of GaN:ZnO Xiong, Anke; Yoshinaga, Taizo; Ikeda, Takahiro European Journal of Inorganic Chemistry, Vol. 2014, Issue 4 https://doi.org/10.1002/ejic.201300439	journal	July 2013
Noble-Metal/Cr2O3 Core/Shell Nanoparticles as a Cocatalyst for Photocatalytic Overall Water Splitting Maeda, Kazuhiko; Teramura, Kentaro; Lu, Daling Angewandte Chemie, Vol. 118, Issue 46 https://doi.org/10.1002/ange.200602473	journal	November 2006
A copper and chromium based nanoparticulate oxide as a noble-metal-free cocatalyst for photocatalytic water splitting Maeda, Kazuhiko; Ohno, Tomoyuki; Domen, Kazunari Chemical Science, Vol. 2, Issue 7 https://doi.org/10.1039/c1sc00177a	journal	January 2011
Production of native donors in ZnO by annealing at high temperature in Zn vapor Halliburton, L. E.; Giles, N. C.; Garces, N. Y. Applied Physics Letters, Vol. 87, Issue 17 https://doi.org/10.1063/1.2117630	journal	October 2005
Thermal oxidation of oxynitride perovskites in different atmospheres Aguiar, Rosiana; Logvinovich, Dmitry; Weidenkaff, Anke Thermochimica Acta, Vol. 471, Issue 1-2 https://doi.org/10.1016/j.tca.2008.02.021	journal	May 2008
Thermally Stable N ₂ -Intercalated WO ₃ Photoanodes for Water Oxidation Mi, Qixi; Ping, Yuan; Li, Yan Journal of the American Chemical Society, Vol. 134, Issue 44 https://doi.org/10.1021/ja3067622	journal	October 2012
Correlation between photoluminescence and oxygen vacancies in ZnO phosphors Vanheusden, K.; Seager, C. H.; Warren, W. L. Applied Physics Letters, Vol. 68, Issue 3 https://doi.org/10.1063/1.116699	journal	January 1996
Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route Kikkawa, Shinichi; Nagasaka, Kazuteru; Takeda, Takashi Journal of Solid State Chemistry, Vol. 180, Issue 7 https://doi.org/10.1016/j.jssc.2007.04.011	journal	July 2007
Atomic geometry and electronic structure of native defects in GaN Neugebauer, Jörg; Van de Walle, Chris G. Physical Review B, Vol. 50, Issue 11 https://doi.org/10.1103/PhysRevB.50.8067	journal	September 1994
Conduction-electron spin resonance in zinc-blende GaN thin films Fanciulli, M.; Lei, T.; Moustakas, T. D. Physical Review B, Vol. 48, Issue 20 https://doi.org/10.1103/PhysRevB.48.15144	journal	November 1993

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Title: Influence of Thermal Annealing on Free Carrier Concentration in (GaN)1–x(ZnO)x Semiconductors

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Title: Influence of Thermal Annealing on Free Carrier Concentration in (GaN)_1–x(ZnO)_x Semiconductors