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Title: Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications

Patent ·
OSTI ID:1422751
; ;

Provided is an electric-current-controllable magnetic unit, including: a substrate, an electric-current channel disposed on the substrate, the electric-current channel including a composite heavy-metal multilayer comprising at least one heavy-metal; a capping layer disposed over the electric-current channel; and at least one ferromagnetic layer disposed between the electric-current channel and the capping layer.

Research Organization:
The John Hopkins University, Baltimore, MD (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
HR0011-13-3-0002
Assignee:
The Johns Hopkins University (Baltimore, MD)
Patent Number(s):
9,899,071
Application Number:
15/411,082
OSTI ID:
1422751
Resource Relation:
Patent File Date: 2017 Jan 20
Country of Publication:
United States
Language:
English

References (15)

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields journal May 2014
Tunnel Magnetoresistive Effect Element and Random Access Memory Using Same patent-application November 2014
Electrical control of the ferromagnetic phase transition in cobalt at room temperature journal October 2011
Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device patent August 2012
Spin-orbit torque magnetic random access memory and method of writing the same patent May 2017
A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration journal March 2016
Spin–orbit torque magnetization switching controlled by geometry journal November 2015
Electrically Gated Three-Terminal Circuits and Devices Based on Spin Hall Torque Effects in Magnetic Nanostructures Apparatus, Methods and Applications patent-application July 2015
Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy patent November 2013
C-element with non-volatile back-up patent August 2016
Magnetoresistance effect element and magnetic memory patent February 2017
Non-Volatile Memory Cell patent-application February 2015
Systems and methods for implementing magnetoelectric junctions patent December 2016
Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry journal February 2016
Systems and Methods for Implementing Efficient Magnetoelectric Junctions patent-application July 2016

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