Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; Swartzentruber, Brian S.; Harris, Charles Thomas

doi:10.1088/1361-6528/aa9173

Title: Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Journal Article · Mon Oct 23 00:00:00 EDT 2017 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aa9173· OSTI ID:1421644

Delker, Collin James ^[1]; Yoo, Jink Young ^[2]; Bussmann, Ezra ^[1]; Swartzentruber, Brian S. ^[1];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000; AC52-06NA25396

OSTI ID:: 1421644

Alternate ID(s):: OSTI ID: 1425761

Report Number(s):: SAND-2017-12601J; LA-UR-17-26093; 658878

Journal Information:: Nanotechnology, Vol. 28, Issue 46; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 1 work

Citation information provided by
Web of Science

References (14)

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes Li, Na; Tan, Teh Y.; Gösele, U. Applied Physics A, Vol. 90, Issue 4 https://doi.org/10.1007/s00339-007-4376-z	journal	January 2008
Dopant profiling in silicon nanowires measured by scanning capacitance microscopy: Dopant profiling in silicon nanowires measured by scanning capacitance microscopy Bassani, Franck; Periwal, Priyanka; Salem, Bassem physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 4 https://doi.org/10.1002/pssr.201409041	journal	March 2014
Formation of nickel germanide contacts to Ge nanowires Dellas, N. S.; Minassian, S.; Redwing, J. M. Applied Physics Letters, Vol. 97, Issue 26 https://doi.org/10.1063/1.3533808	journal	December 2010
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels Xie, R.; Montanini, P.; Akarvardar, K. 2016 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/iedm.2016.7838334	conference	December 2016
Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation Hoffmann, S.; Bauer, J.; Ronning, C. Nano Letters, Vol. 9, Issue 4 https://doi.org/10.1021/nl802977m	journal	April 2009
In Situ Axially Doped n -Channel Silicon Nanowire Field-Effect Transistors Ho, Tsung-ta; Wang, Yanfeng; Eichfeld, Sarah Nano Letters, Vol. 8, Issue 12 https://doi.org/10.1021/nl8022059	journal	December 2008
The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C Jin, L. J.; Pey, K. L.; Choi, W. K. Thin Solid Films, Vol. 462-463 https://doi.org/10.1016/j.tsf.2004.05.047	journal	September 2004
Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications Chen, J.; Colinge, J. ‐P.; Flandre, D. Journal of The Electrochemical Society, Vol. 144, Issue 7 https://doi.org/10.1149/1.1837833	journal	July 1997
Realization of a Linear Germanium Nanowire p−n Junction Tutuc, Emanuel; Appenzeller, Joerg; Reuter, Mark C. Nano Letters, Vol. 6, Issue 9 https://doi.org/10.1021/nl061338f	journal	September 2006
High-mobility Si and Ge structures Schäffler, Friedrich Semiconductor Science and Technology, Vol. 12, Issue 12 https://doi.org/10.1088/0268-1242/12/12/001	journal	December 1997
Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires Le, Son T.; Jannaty, P.; Zaslavsky, A. Applied Physics Letters, Vol. 96, Issue 26 https://doi.org/10.1063/1.3457862	journal	June 2010
Vapor-liquid-solid epitaxial growth of Si ₁₋ _x Ge _x alloy nanowires: Composition dependence on precursor reactivity and morphology control for vertical forests Choi, S. G.; Manandhar, P.; Picraux, S. T. Journal of Applied Physics, Vol. 118, Issue 1 https://doi.org/10.1063/1.4923355	journal	July 2015
A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K Chakraborty, Partha S.; Cardoso, Adilson S.; Wier, Brian R. IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2295214	journal	February 2014
Current and Noise Properties of InAs Nanowire Transistors With Asymmetric Contacts Induced by Gate Overlap Delker, Collin J.; Zi, Yunlong; Yang, Chen IEEE Transactions on Electron Devices, Vol. 61, Issue 3, p. 884-889 https://doi.org/10.1109/TED.2013.2296298	journal	March 2014

Cited By (2)

Plastic recovery and self-healing in longitudinally twinned SiGe nanowires Shikder, Md Ruhul Amin; Ramasubramanian, Ajaykrishna; Maksud, Mahjabin Nanoscale, Vol. 11, Issue 18 https://doi.org/10.1039/c9nr02073j	journal	January 2019
Plastic recovery and self-healing in longitudinally twinned SiGe nanowires Shikder, Mra; Ramasubramanian, A.; Maksud, M. University of Illinois at Chicago https://doi.org/10.25417/uic.14910273.v1	text	January 2021

Similar Records

Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors.

Conference · Wed May 01 00:00:00 EDT 2019 · OSTI ID:1421644

Delker, Collin James; Yoo, Jinkyoung; Swartzentruber, Brian; +1 more

Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors

Journal Article · Mon Mar 18 00:00:00 EDT 2019 · IEEE Electron Device Letters · OSTI ID:1421644

Delker, Collin J.; Yoo, Jinkyoung; Swartzentruber, Brian S.; +1 more

Electrical transport in dual-gate PN-junction nanowires.

Conference · Mon Sep 01 00:00:00 EDT 2014 · OSTI ID:1421644

Swartzentruber, Brian; Delker, Collin James; Yoo, Jinkyoung

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
nanowires
SiGe
p–n junction
field-effect transistor
Schottky contact
Material Science

Title: Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Citation Formats

References (14)

Cited By (2)

Similar Records

Related Subjects