Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors
Abstract
Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. Here in this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile and with a top gate covering only the p-doped section of the nanowire. For each device, we locate the p-segment with scanning capacitance microscopy, where the p-segment position varies along the channel due to the stochastic nature of our dropcast fabrication technique. The current–voltage characteristics for a series of transistors with different gate positions reveal that the on/off ratios for electrons is the highest when the gated p-type section is closest to the source contact, whereas the on/off ratios for holes is the highest when the gated p-type section is closest to the drain contact.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1511610
- Report Number(s):
- LA-UR-18-28409
Journal ID: ISSN 0741-3106
- Grant/Contract Number:
- 89233218CNA000001
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- IEEE Electron Device Letters
- Additional Journal Information:
- Journal Volume: 40; Journal Issue: 5; Journal ID: ISSN 0741-3106
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Delker, Collin J., Yoo, Jinkyoung, Swartzentruber, Brian S., and Harris, C. Thomas. Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors. United States: N. p., 2019.
Web. doi:10.1109/LED.2019.2905527.
Delker, Collin J., Yoo, Jinkyoung, Swartzentruber, Brian S., & Harris, C. Thomas. Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors. United States. https://doi.org/10.1109/LED.2019.2905527
Delker, Collin J., Yoo, Jinkyoung, Swartzentruber, Brian S., and Harris, C. Thomas. 2019.
"Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors". United States. https://doi.org/10.1109/LED.2019.2905527. https://www.osti.gov/servlets/purl/1511610.
@article{osti_1511610,
title = {Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors},
author = {Delker, Collin J. and Yoo, Jinkyoung and Swartzentruber, Brian S. and Harris, C. Thomas},
abstractNote = {Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. Here in this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile and with a top gate covering only the p-doped section of the nanowire. For each device, we locate the p-segment with scanning capacitance microscopy, where the p-segment position varies along the channel due to the stochastic nature of our dropcast fabrication technique. The current–voltage characteristics for a series of transistors with different gate positions reveal that the on/off ratios for electrons is the highest when the gated p-type section is closest to the source contact, whereas the on/off ratios for holes is the highest when the gated p-type section is closest to the drain contact.},
doi = {10.1109/LED.2019.2905527},
url = {https://www.osti.gov/biblio/1511610},
journal = {IEEE Electron Device Letters},
issn = {0741-3106},
number = 5,
volume = 40,
place = {United States},
year = {Mon Mar 18 00:00:00 EDT 2019},
month = {Mon Mar 18 00:00:00 EDT 2019}
}
Web of Science