Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; Swartzentruber, Brian S.; Harris, Charles Thomas

doi:10.1088/1361-6528/aa9173

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Journal Article · Mon Oct 23 00:00:00 EDT 2017 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aa9173· OSTI ID:1421644

Delker, Collin James ^[1]; Yoo, Jink Young ^[2]; Bussmann, Ezra ^[1]; Swartzentruber, Brian S. ^[1]; ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1421644

Alternate ID(s):: OSTI ID: 1425761
OSTI ID: 22798359

Report Number(s):: SAND--2017-12601J; 658878

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 46 Vol. 28; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Plastic recovery and self-healing in longitudinally twinned SiGe nanowires Shikder, Mra; Ramasubramanian, A.; Maksud, M. University of Illinois at Chicago https://doi.org/10.25417/uic.14910273.v1	text	January 2021

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77 NANOSCIENCE AND NANOTECHNOLOGY
Schottky contact
SiGe
field-effect transistor
nanowires
p–n junction

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

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References (17)

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