The gating cycle of a K+ channel at atomic resolution

Cuello, Luis G.; Cortes, D. Marien; Perozo, Eduardo

doi:10.7554/eLife.28032

Title: The gating cycle of a K+ channel at atomic resolution

Journal Article · Wed Nov 22 00:00:00 EST 2017 · eLife

DOI:https://doi.org/10.7554/eLife.28032· OSTI ID:1420996

^[1]; Cortes, D. Marien ^[1];

^[2]

Center for Membrane Protein Research, Department of Cell Physiology and Molecular Biophysics, Texas Tech University Health Sciences Center, Lubbock, United States
Department of Biochemistry and Molecular Biology, The University of Chicago, Chicago, United States

C-type inactivation in potassium channels helps fine-tune long-term channel activity through conformational changes at the selectivity filter. Here, through the use of cross-linked constitutively open constructs, we determined the structures of KcsA’s mutants that stabilize the selectivity filter in its conductive (E71A, at 2.25 Å) and deep C-type inactivated (Y82A at 2.4 Å) conformations. These structural snapshots represent KcsA’s transient open-conductive (O/O) and the stable open deep C-type inactivated states (O/I), respectively. The present structures provide an unprecedented view of the selectivity filter backbone in its collapsed deep C-type inactivated conformation, highlighting the close interactions with structural waters and the local allosteric interactions that couple activation and inactivation gating. Together with the structures associated with the closed-inactivated state (C/I) and in the well-known closed conductive state (C/O), this work recapitulates, at atomic resolution, the key conformational changes of a potassium channel pore domain as it progresses along its gating cycle.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: OTHERNIGMS

OSTI ID:: 1420996

Journal Information:: eLife, Vol. 6, Issue 2017; ISSN 2050-084X

Publisher:: eLife Sciences Publications, Ltd.

Country of Publication:: United States

Language:: ENGLISH

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