Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Coon, W. T.; Fortune, T. R.; Tauke-Pedretti, A.; Cavaliere, M. A.; Shaner, E. A.

doi:10.1063/1.4954649

Title: Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

Journal Article · Tue Jun 21 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4954649· OSTI ID:1420588

; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Coon, W. T.; Fortune, T. R.; Tauke-Pedretti, A.; Cavaliere, M. A.; Shaner, E. A.

Optical and electrical properties of nBn photodetectors using InAs/AlAs/AlSb/AlAs/InAs/InAs0.61Sb0.39W-structure superlattice (W-SL) absorbers are reported. Minority carrier lifetimes of 500 ± 50 ns and 400 ± 30 ns, and Auger coefficients of 2.1 × 10−26 cm6/s and 1.6 × 10−25 cm6/s, for samples with bandgap energies of 5.3 μm (W-SL A) and 7.5 μm (W-SL B) are reported at 100 K, respectively. Shockley–Read–Hall defect states are identified at 65 meV and 45 meV above the W-SL valence band edges for W-SLs A and B, respectively. Dark currents are also reported and compared with diffusion currents calculated using the carrier lifetime data, suggesting low vertical heavy hole diffusivity.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI ID:: 1420588

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 108 Journal Issue: 25; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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References (14)

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Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Journal of Applied Physics, Vol. 118, Issue 12 https://doi.org/10.1063/1.4931419	journal	September 2015
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
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Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
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Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs _0.91 Sb _0.09 alloy nBn photodetectors Olson, B. V.; Kim, J. K.; Kadlec, E. A. Applied Physics Letters, Vol. 107, Issue 18 https://doi.org/10.1063/1.4935159	journal	November 2015
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