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Semiconducting cubic titanium nitride in the Th3P4 structure

Journal Article · · Physical Review Materials
We report the discovery of a long-sought-after phase of titanium nitride with stoichiometry Ti 3 N 4 using diamond anvil cell experiments combined with in situ high-resolution x-ray diffraction and Raman spectroscopy techniques, supported by ab initio calculations. Ti 3 N 4 crystallizes in the cubic Th 3 P 4 structure [space group I ¯ 4 3 d (220)] from a mixture of TiN and N 2 above ≈ 75 GPa and ≈ 2400 K. The density ( ≈ 5.22 g/cc) and bulk modulus ( K 0 = 290 GPa) of cubic- Ti 3 N 4 ( c - Ti 3 N 4 ) at 1 atm, estimated from the pressure-volume equation of state, are comparable to rocksalt TiN. Ab initio calculations based on the GW approximation and using hybrid functionals indicate that c - Ti 3 N 4 is a semiconductor with a direct band gap between 0.8 and 0.9 eV, which is larger than the previously predicted values. The c - Ti 3 N 4 phase is not recoverable to ambient pressure due to dynamic instabilities, but recovery of Ti 3 N 4 in the defect rocksalt (or related) structure may be feasible.
Research Organization:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Organization:
DOE - BASIC ENERGY SCIENCESNSFDOE-NNSAAHA
OSTI ID:
1418047
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 1 Vol. 2; ISSN PRMHAR; ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
ENGLISH

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Cited By (5)

New nitrides: from high pressure–high temperature synthesis to layered nanomaterials and energy applications journal April 2019
Ternary nitride semiconductors in the rocksalt crystal structure journal July 2019
Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility journal January 2019
Discovery of Ternary Silicon Titanium Nitride with Spinel-Type Structure text January 2020
Discovery of Ternary Silicon Titanium Nitride with Spinel-Type Structure journal April 2020

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