Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers

Mehari, Shlomo; Cohen, Daniel A.; Becerra, Daniel L.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1364/OE.26.001564

Title: Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers

Journal Article · Tue Jan 16 00:00:00 EST 2018 · Optics Express

DOI:https://doi.org/10.1364/OE.26.001564· OSTI ID:1417123

; Cohen, Daniel A.; Becerra, Daniel L.; Nakamura, Shuji; DenBaars, Steven P.

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm² was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000671

OSTI ID:: 1417123

Alternate ID(s):: OSTI ID: 1503242

Journal Information:: Optics Express, Journal Name: Optics Express Vol. 26 Journal Issue: 2; ISSN 1094-4087

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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