Defect mechanisms in BaTiO 3 ‐Bi M O 3 ceramics

Kumar, Nitish; Patterson, Eric A.; Frömling, Till; Gorzkowski, Edward P.; Eschbach, Peter; Love, Ian; Müller, Michael P.; De Souza, Roger A.; Tucker, Julie; Reese, Steven R.; Cann, David P.

doi:10.1111/jace.15403

Title: Defect mechanisms in BaTiO ₃ ‐Bi M O ₃ ceramics

Journal Article · Mon Jan 08 00:00:00 EST 2018 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/jace.15403· OSTI ID:1416398

^[1];

^[2]; Frömling, Till ^[3]; Gorzkowski, Edward P. ^[4]; Eschbach, Peter ^[5]; Love, Ian ^[6]; Müller, Michael P. ^[7];

^[7]; Tucker, Julie ^[6]; Reese, Steven R. ^[8];

^[6]

Materials Science School of Mechanical, Industrial, and Manufacturing Engineering Oregon State University Corvallis Oregon, Materials Science and Engineering The University of New South Wales Sydney NSW Australia
Institute of Materials Science Technische Universität Darmstadt Darmstadt Germany, US Naval Research Laboratory Washington DC
Institute of Materials Science Technische Universität Darmstadt Darmstadt Germany
US Naval Research Laboratory Washington DC
College of Science Oregon State University Corvallis Oregon
Materials Science School of Mechanical, Industrial, and Manufacturing Engineering Oregon State University Corvallis Oregon
Institute of Physical Chemistry RWTH Aachen University Aachen Germany
School of Nuclear Science and Engineering Oregon State University Corvallis Oregon

Abstract Often, addition of Bi M O ₃ to BaTiO ₃ ( BT ) leads to improvement in resistivity with a simultaneous shift to n‐type conduction from p‐type for BT . In considering one specific Bi M O ₃ composition, that is, Bi(Zn _1/2 Ti _1/2 )O ₃ ( BZT ), several prospective candidates for the origin of this n‐type behavior in BT ‐ BZT were studied—loss of volatile cations, oxygen vacancies, bismuth present in multiple valence states and precipitation of secondary phases. Combined x‐ray and neutron diffraction, prompt gamma neutron activation analysis and electron energy loss spectroscopy suggested much higher oxygen vacancy concentration in BT ‐ BZT ceramics (>4%) as compared to BT alone. X‐ray photoelectron spectroscopy and x‐ray absorption spectroscopy did not suggest the presence of bismuth in multiple valence states. At the same time, using transmission electron microscopy, some minor secondary phases were observed, whose compositions were such that they could result in effective donor doping in BT ‐ BZT ceramics. Using experimentally determined thermodynamic parameters for BT and slopes of Kröger‐Vink plots, it has been suggested that an ionic compensation mechanism is prevalent in these ceramics instead of electronic compensation. These ionic defects have an effect of shifting the conductivity minimum in the Kröger‐Vink plots to higher oxygen partial pressure values in BT ‐ BZT ceramics as compared to BT , resulting in a significantly higher resistivity values in air atmosphere and n‐type behavior. This provides an important tool to tailor transport properties and defects in BT ‐Bi M O ₃ ceramics, to make them better suited for dielectric or other applications.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC02‐06CH11357

OSTI ID:: 1416398

Journal Information:: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Vol. 101 Journal Issue: 6; ISSN 0002-7820

Publisher:: Wiley-BlackwellCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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