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Optical charge state control of spin defects in 4H-SiC

Journal Article · · Nature Communications
 [1];  [2];  [3];  [2];  [4];  [4];  [3];  [3]
  1. Univ. of Chicago, Chicago, IL (United States); Tohoku Univ., Sendai (Japan)
  2. Univ. of Chicago, Chicago, IL (United States)
  3. Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
  4. Argonne National Lab. (ANL), Lemont, IL (United States)
+ Show Author Affiliations
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. As a result, we develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF); U.S. Department of Defense; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Chemical Sciences, Geosciences & Biosciences Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1415570
Journal Information:
Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 8; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (24)

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions journal December 2019
Optical switching of defect charge states in 4H-SiC journal October 2017
Electrometry by optical charge conversion of deep defects in 4H-SiC journal July 2018
Stabilization of point-defect spin qubits by quantum wells journal December 2019
Identification and tunable optical coherent control of transition-metal spins in silicon carbide journal October 2018
Electrical charge state identification and control for the silicon vacancy in 4H-SiC journal December 2019
Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics journal February 2019
Stark tuning and electrical charge state control of single divacancies in silicon carbide journal December 2017
Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide journal July 2019
Defect-induced magnetism in SiC journal July 2019
Bias-switchable negative and positive photoconductivity in 2D FePS 3 ultraviolet photodetectors journal April 2018
Resonant Optical Spin Initialization and Readout of Single Silicon Vacancies in 4 H - Si C journal February 2019
Excitation properties of the divacancy in 4 H -SiC journal November 2018
Charge state switching of the divacancy defect in 4 H -SiC journal December 2018
Identifying and Mitigating Charge Instabilities in Shallow Diamond Nitrogen-Vacancy Centers journal February 2019
Thermal evolution of silicon carbide electronic bands journal January 2020
Electrically driven optical interferometry with spins in silicon carbide journal November 2019
Electrical and optical control of single spins integrated in scalable semiconductor devices journal December 2019
Electrical charge state identification and control for the silicon vacancy in 4H-SiC text January 2019
Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide text January 2017
Electrometry by optical charge conversion of deep defects in 4H-SiC text January 2018
Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers text January 2018
Electrically driven optical interferometry with spins in silicon carbide text January 2019
Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide text January 2019

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