Large-scale electronic structure calculations of vacancies in 4H-SiC using the Heyd-Scuseria-Ernzerhof screened hybrid density functional
|
preprint
|
January 2011 |
Coherent control of single spins in silicon carbide at room temperature
|
journal
|
December 2014 |
Isolated electron spins in silicon carbide with millisecond coherence times
|
journal
|
December 2014 |
EPR and theoretical studies of negatively charged carbon vacancy in
|
journal
|
May 2005 |
Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
|
journal
|
March 2011 |
Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
|
journal
|
July 2015 |
Room-temperature quantum microwave emitters based on spin defects in silicon carbide
|
journal
|
December 2013 |
Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength
|
journal
|
June 2002 |
Metastable Dark States Enable Ground State Depletion Microscopy of Nitrogen Vacancy Centers in Diamond with Diffraction-Unlimited Resolution
|
journal
|
August 2010 |
Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC
|
journal
|
January 2017 |
Quantum error correction in a solid-state hybrid spin register
|
journal
|
February 2014 |
Defects as qubits in and
|
journal
|
July 2015 |
Nanometre-scale thermometry in a living cell
|
journal
|
July 2013 |
Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields
|
journal
|
December 2011 |
Long-term data storage in diamond
|
text
|
January 2016 |
Coherent control of single spins in silicon carbide at room temperature
|
text
|
January 2014 |
Electron spin coherence exceeding seconds in high purity silicon
|
text
|
January 2011 |
Evidence for near-infrared photoluminescence of nitrogen vacancy centers in
|
journal
|
August 2016 |
Characterization and formation of NV centers in , and SiC: An ab initio study
|
journal
|
August 2017 |
Optical switching of defect charge states in 4H-SiC
|
journal
|
October 2017 |
The silicon vacancy in SiC
|
journal
|
December 2009 |
EPR identification of intrinsic defects in SiC
|
journal
|
July 2008 |
Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond
|
journal
|
May 2013 |
Nanoscale magnetic sensing with an individual electronic spin in diamond
|
journal
|
October 2008 |
Annealing of multivacancy defects in
|
journal
|
December 2006 |
Divacancy in 4H-SiC
|
journal
|
February 2006 |
Excitation spectrum of point defects in semiconductors studied by time-dependent density functional theory
|
journal
|
January 2012 |
Quantum error correction in a solid-state hybrid spin register
|
text
|
January 2013 |
Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
|
journal
|
August 2004 |
Room temperature coherent control of defect spin qubits in silicon carbide
|
journal
|
November 2011 |
Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond
|
journal
|
January 2015 |
Polytype control of spin qubits in silicon carbide
|
journal
|
May 2013 |
The Silicon Vacancy in SiC
|
journal
|
March 2009 |
Quantum decoherence dynamics of divacancy spins in silicon carbide
|
text
|
January 2016 |
Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond
|
text
|
January 2013 |
Single-shot readout of an electron spin in silicon
|
journal
|
September 2010 |
High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies
|
journal
|
February 2012 |
Deactivation of nitrogen donors in silicon carbide
|
journal
|
December 2006 |
Photo-ionization of deep impurity levels in semiconductors with non-parabolic bands
|
journal
|
August 1975 |
Electron spin coherence exceeding seconds in high-purity silicon
|
journal
|
December 2011 |
Electronic structure of the shallow boron acceptor in 6H-SiC:mA pulsed EPR/ENDOR study at 95 GHz
|
journal
|
January 1997 |
Formation and annealing of nitrogen-related complexes in SiC
|
journal
|
May 2003 |
Photo-induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single-shot charge state detection
|
journal
|
January 2013 |
Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation
|
journal
|
March 2010 |
Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures
|
journal
|
April 2013 |
Defects in SiC for quantum computing
|
journal
|
May 2011 |
Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
|
journal
|
September 2008 |
Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy
|
journal
|
March 2011 |
Long-term data storage in diamond
|
journal
|
October 2016 |
Defects and carrier compensation in semi-insulating substrates
|
journal
|
April 2007 |
Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields
|
text
|
January 2011 |
Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection
|
text
|
January 2012 |
Divacancy in and An extremely stable defect
|
journal
|
January 2002 |
Negative- System of Carbon Vacancy in -SiC
|
journal
|
October 2012 |
Single-shot readout of an electron spin in silicon
|
text
|
January 2010 |
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
|
journal
|
June 2004 |
Quantum decoherence dynamics of divacancy spins in silicon carbide
|
journal
|
September 2016 |