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Title: Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1414990
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 26; Related Information: CHORUS Timestamp: 2017-12-27 14:13:46; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., and Weitering, Hanno H.. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.266802.
Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., & Weitering, Hanno H.. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice. United States. doi:10.1103/PhysRevLett.119.266802.
Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., and Weitering, Hanno H.. 2017. "Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice". United States. doi:10.1103/PhysRevLett.119.266802.
@article{osti_1414990,
title = {Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice},
author = {Ming, Fangfei and Johnston, Steve and Mulugeta, Daniel and Smith, Tyler S. and Vilmercati, Paolo and Lee, Geunseop and Maier, Thomas A. and Snijders, Paul C. and Weitering, Hanno H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.266802},
journal = {Physical Review Letters},
number = 26,
volume = 119,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 27, 2018
Publisher's Accepted Manuscript

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  • The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. Here we investigate the evolution of electronic structure and dynamics of the hole-doped pseudospin-1/2 Mott insulator Sr 2 IrO 4 . The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple iconic low-energy features previously observedmore » in doped cuprates - pseudogaps, Fermi arcs and marginal-Fermi-liquid-like electronic scattering rates. We suggest these signatures are most likely an integral part of the material's proximity to the Mott state, rather than from many of the most claimed mechanisms, including preformed electron pairing, quantum criticality or density-wave formation.« less
  • Momentum-resolved direct and inverse photoemission spectra of the K/Si(111)-({radical}(3){times}{radical}(3))R30{degree}-B interface reveals the presence of strongly localized surface states. The K overlayer remains nonmetallic up to the saturation coverage. This system most likely presents the first experimental realization of a frustrated spin 1/2 Heisenberg antiferromagnet on a two-dimensional triangular lattice. {copyright} {ital 1997} {ital The American Physical Society}
  • Charge excitations in Mott insulators MIs are distinct from their band-insulator counterparts and they can provide a mechanism for energy harvesting in solar cells based on strongly correlated electronic materials. In this paper, we study the real-time dynamics of holon-doublon pairs in an MI connected to metallic leads using the time-dependent density-matrix renormalization-group method. The transfer of charge across the MI-metal interface is controlled by both the electron-electron interaction strength within the MI and the voltage difference between the leads. We find an overall enhancement of the charge transfer as compared to the case of a noninteracting band insulator-metal interfacemore » with a similar band gap. Moreover, the propagation of holondoublon excitations within the MI dynamically changes the spin-spin correlations, introducing time-dependent phase shifts in the spin-structure factor.« less