Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

doi:10.1103/PhysRevLett.119.266802

Title: Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Journal Article · Wed Dec 27 00:00:00 EST 2017 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.119.266802· OSTI ID:1471877

Ming, Fangfei ^[1]; Johnston, Steve ^[2]; Mulugeta, Daniel ^[1]; Smith, Tyler S. ^[1]; Vilmercati, Paolo ^[2]; Lee, Geunseop ^[3]; Maier, Thomas A. ^[4]; Snijders, Paul C. ^[5]; Weitering, Hanno H. ^[1]

Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy. Joint Inst. of Advanced Materials
Inha Univ., Incheon (Korea, Republic of). Dept. of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computational Science and Engineering Division. Center for Nanophase Materials Sciences
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. In this paper, using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional $sp$-bonded semiconductor materials. Finally, it suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States); Inha University, Incheon (Korea, Republic of)

Sponsoring Organization:: USDOE; ORNL Laboratory Directed Research and Development (LDRD) Program; UT-ORNL Joint Directed Research and Development (JDRD) Program; National Science Foundation (NSF); National Research Foundation of Korea (NRF); Ministry of Science, ICT and Future Planning (MSIP) of Korea

Grant/Contract Number:: AC05-00OR22725; DMR 1410265; NRF-2017R1A2B2003928

OSTI ID:: 1471877

Alternate ID(s):: OSTI ID: 1414990

Journal Information:: Physical Review Letters, Vol. 119, Issue 26; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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36 MATERIALS SCIENCE
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Title: Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

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