Low energy electron-enhanced etching of silicon by hydrogen
- Georgia Institute of Technology, Atlanta, GA (United States)
Anisotropic etching without ion bombardment damage is essential for fabrication of nanometer-scale semiconductor quantum devices with lateral resolution of 1000{angstrom} and vertical resolution of 100{angstrom}. As an alternative to Reactive Ion Etching (RIE), the authors have investigated damage-free etching of Si(100)-(2x1) by H atoms and low energy (10-1000 eV) electrons in two different, but related systems. A mechanistic UHV study was performed utilizing H atom and electron beams. Adsorption of reactants was monitored by surface techniques (LEED, UPS, ESD, and TSD) while steady-state etch products were detected by a differentially pumped quadrupole mass spectrometer. Results showing kinetics for removal by a differentially pumped quadrupole mass spectrometer. Results showing kinetics for removal of several hydride species, without significant surface damage, will be presented. Additionally, primary reaction products and product desorption velocities will be reported. A high etch-rate study was performed using a DC plasma reactor, in which the sample as placed on the anode in a hydrogen plasma. Results will be presented showing dependence of etch rate and profile on plasma parameters.
- OSTI ID:
- 141473
- Report Number(s):
- CONF-930304-; TRN: 93:003688-1150
- Resource Relation:
- Conference: 205. American Chemical Society national meeting, Denver, CO (United States), 28 Mar - 2 Apr 1993; Other Information: PBD: 1993; Related Information: Is Part Of 205th ACS national meeting; PB: 1951 p.
- Country of Publication:
- United States
- Language:
- English
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