Dry etching of III-V nitrides
- Florida Univ., Gainesville, FL (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- Army Research Laboratory, Ft. Monmouth, NJ (United States)
- Plasma Therm IP, St. Petersburg, FL (United States)
The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 154941
- Report Number(s):
- SAND-95-2699C; CONF-951155-6; ON: DE96003101
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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