Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; Armstrong, Andrew M.; Douglas, Erica A.; Stephenson, Chad A.; Fortune, Torben R.; Kaplar, Robert J.

doi:10.1149/2.0231712jss

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Journal Article · Fri Dec 08 23:00:00 EST 2017 · ECS Journal of Solid State Science and Technology

DOI:https://doi.org/10.1149/2.0231712jss· OSTI ID:1414439

Baca, Albert G. ^[1]; Klein, Brianna A. ^[1]; Allerman, Andrew A. ^[1]; Armstrong, Andrew M. ^[1]; Douglas, Erica A. ^[1]; Stephenson, Chad A. ^[1]; Fortune, Torben R. ^[1]; ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al_xGa_1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I_on/I_off current ratio, of 8 × 10⁹ was demonstrated. A near ideal subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1414439

Report Number(s):: SAND--2017-13486J; 659496

Journal Information:: ECS Journal of Solid State Science and Technology, Journal Name: ECS Journal of Solid State Science and Technology Journal Issue: 12 Vol. 6; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al _0.6 Ga _0.4 N to AlN Armstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G. Applied Physics Letters, Vol. 114, Issue 5 https://doi.org/10.1063/1.5058263	journal	February 2019
Enhancement-mode Al _0.85 Ga _0.15 N/Al _0.7 Ga _0.3 N high electron mobility transistor with fluorine treatment Klein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M. Applied Physics Letters, Vol. 114, Issue 11 https://doi.org/10.1063/1.5064543	journal	March 2019
Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate Armstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A. Photonics Research, Vol. 7, Issue 6 https://doi.org/10.1364/prj.7.000b24	journal	January 2019

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Related Subjects

36 MATERIALS SCIENCE
HEMT
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high electron mobility transistor