In-plane g factor of low-density two-dimensional holes in a Ge quantum well.

Technical Report · Fri Dec 01 04:00:00 EST 2017

DOI:https://doi.org/10.2172/1413417· OSTI ID:1413417

Lu, Tzu-Ming ^[1]; Harris, Charles Thomas ^[1]; Huang, Shih-Hsien ^[2]; Chuang, Yen ^[2]; Li, Jiun-Yun ^[2]; Liu, CheeWee ^[2]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. National Taiwan Univ., Taipei (Taiwan)

High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (g_ip) can be vanishingly small while the perpendicular g factor (g_z) can be much larger than 2. Here we report the measurement of g_ip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1413417
• Report Number(s): SAND--2017-13281R; 659358
• Country of Publication: United States
• Language: English

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36 MATERIALS SCIENCE