skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

Authors:
 [1];  [2];  [2];  [3];  [4];  [5];  [5]; ORCiD logo [6];  [5]; ORCiD logo [7]
  1. Department of Materials Science Fudan University, Shanghai 200433 P. R. China, Materials Sciences Division Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
  2. Materials Sciences Division Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
  3. Advanced Light Source Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
  4. Electrical Engineering and Computer Sciences University of California, Berkeley CA 94720 USA
  5. Department of Materials Science Fudan University, Shanghai 200433 P. R. China
  6. Materials Sciences Division Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA, Electrical Engineering and Computer Sciences University of California, Berkeley CA 94720 USA
  7. Materials Sciences Division Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA, Materials Science and Engineering University of California at Berkeley, Berkeley CA 94720 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1413039
Grant/Contract Number:
AC02-05CH11231; EE0004946; AC02-76SF00515
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Volume: 12; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-05 11:03:58; Journal ID: ISSN 1862-6254
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. Germany: N. p., 2017. Web. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, & Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. Germany. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. 2017. "Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode". Germany. doi:10.1002/pssr.201700381.
@article{osti_1413039,
title = {Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode},
author = {Xu, Xiaojie and Shukla, Sudhanshu and Liu, Ya and Yue, Binbin and Bullock, James and Su, Longxing and Li, Yanmei and Javey, Ali and Fang, Xiaosheng and Ager, Joel W.},
abstractNote = {},
doi = {10.1002/pssr.201700381},
journal = {Physica Status Solidi rrl},
number = 2,
volume = 12,
place = {Germany},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 12, 2018
Publisher's Accepted Manuscript

Save / Share:
  • Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. Furthermore, we used scanning Kelvin probe microscopy to further show how the above approaches improved carriermore » collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A 2CdTe 2 (A = Na, K, Cs, N 2H 5), can be used in conjunction with current/light soaking to improve PCE further.« less
  • Efficient and low-cost methods for obtaining high performance flexible transparent electrodes based on chemical vapor deposition (CVD)-grown graphene are highly desirable. In this work, the graphene grown on copper foil was exfoliated into micron-size sheets through controllable ultrasonication. We developed a clean technique by blending the exfoliated single layer graphene sheets with conducting polymer to form graphene-based composite solution, which can be spin-coated on flexible substrate, forming flexible transparent conducting film with high conductivity (∼8 Ω/□), high transmittance (∼81% at 550 nm), and excellent mechanical robustness. In addition, CVD-grown-graphene-based polymer light emitting diodes with excellent bendable performances were demonstrated.
  • Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect ofmore » Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.« less
  • We use conductive atomic force microscopy (CAFM) to study the origin of long-range conductivity in model transparent conductive electrodes composed of networks of reduced graphene oxide (rGO{sub X}) and silver nanowires (AgNWs), with nanoscale spatial resolution. Pristine networks of rGO{sub X} (1–3 monolayers-thick) and AgNWs exhibit sheet resistances of ∼100–1000 kΩ/□ and 100–900 Ω/□, respectively. When the materials are deposited sequentially to form bilayer rGO{sub X}/AgNW electrodes and thermally annealed at 200 °C, the sheet resistance reduces by up to 36% as compared to pristine AgNW networks. CAFM was used to analyze the current spreading in both systems in order to identify themore » nanoscale phenomena responsible for this effect. For rGO{sub X} networks, the low intra-flake conductivity and the inter-flake contact resistance is found to dominate the macroscopic sheet resistance, while for AgNW networks the latter is determined by the density of the inter-AgNW junctions and their associated resistance. In the case of the bilayer rGO{sub X}/AgNWs' networks, rGO{sub X} flakes are found to form conductive “bridges” between AgNWs. We show that these additional nanoscopic electrical connections are responsible for the enhanced macroscopic conductivity of the bilayer rGO{sub X}/AgNW electrodes. Finally, the critical role of thermal annealing on the formation of these nanoscopic connections is discussed.« less
  • We report photovoltaic response of highly transparent graphene/BiFe{sub 0.95}Si{sub 0.05}O{sub 3} (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I{sub SC} 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V{sub OC} ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I{sub SC} of 0.63 mA and V{sub OC} of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I{sub SC} and V{sub OC} with quick switching (<100 ms) for 20 consecutive cycles andmore » stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.« less