Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain

Hwang, Choongyu; Hwang, Jinwoong; Lee, Ji-Eun; Denlinger, Jonathan; Mo, Sung-Kwan

doi:10.1063/1.4986425

Title: Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain

Journal Article · Wed Dec 06 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4986425· OSTI ID:1530310

^[1]; Hwang, Jinwoong ^[1]; Lee, Ji-Eun ^[1]; Denlinger, Jonathan ^[2];

^[2]

Pusan National Univ., Busan (South Korea)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

We have iobserved the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ~50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Research Foundation of Korea (NRF)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530310

Alternate ID(s):: OSTI ID: 1411480

Journal Information:: Applied Physics Letters, Vol. 111, Issue 23; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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