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Title: Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain

Authors:
ORCiD logo [1];  [1];  [1];  [2]; ORCiD logo [2]
  1. Department of Physics, Pusan National University, Busan 609-735, South Korea
  2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1411480
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Hwang, Choongyu, Hwang, Jinwoong, Lee, Ji-Eun, Denlinger, Jonathan, and Mo, Sung-Kwan. Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain. United States: N. p., 2017. Web. doi:10.1063/1.4986425.
Hwang, Choongyu, Hwang, Jinwoong, Lee, Ji-Eun, Denlinger, Jonathan, & Mo, Sung-Kwan. Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain. United States. doi:10.1063/1.4986425.
Hwang, Choongyu, Hwang, Jinwoong, Lee, Ji-Eun, Denlinger, Jonathan, and Mo, Sung-Kwan. Mon . "Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain". United States. doi:10.1063/1.4986425.
@article{osti_1411480,
title = {Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain},
author = {Hwang, Choongyu and Hwang, Jinwoong and Lee, Ji-Eun and Denlinger, Jonathan and Mo, Sung-Kwan},
abstractNote = {},
doi = {10.1063/1.4986425},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2017},
month = {Mon Dec 04 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 6, 2018
Publisher's Accepted Manuscript

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Works referenced in this record:

Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
journal, June 2006

  • Seyller, Th.; Emtsev, K. V.; Speck, F.
  • Applied Physics Letters, Vol. 88, Issue 24, Article No. 242103
  • DOI: 10.1063/1.2213928